All MOSFET. FQI27N25TU Datasheet

 

FQI27N25TU Datasheet and Replacement


   Type Designator: FQI27N25TU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 25.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 270 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: I2-PAK
 

 FQI27N25TU substitution

   - MOSFET ⓘ Cross-Reference Search

 

FQI27N25TU Datasheet (PDF)

 ..1. Size:814K  fairchild semi
 fqb27n25tm am002 fqi27n25tu fqi27n25 fqb27n25.pdf pdf_icon

FQI27N25TU

May 2000TMQFETQFETQFETQFETFQB27N25 / FQI27N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 25.5A, 250V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 50 nC)planar stripe, DMOS technology. Low Crss ( typical 45 pF)This advanced technology

 ..2. Size:1099K  fairchild semi
 fqi27n25tu f085.pdf pdf_icon

FQI27N25TU

April 2010tmFQI27N25TU_F085250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 25.5A, 250V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 50 nC)planar stripe, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailo

 9.1. Size:1071K  fairchild semi
 fqb27p06tm fqi27p06tu.pdf pdf_icon

FQI27N25TU

October 2008QFETFQB27P06 / FQI27P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 33 nC)planar stripe, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especia

 9.2. Size:1119K  fairchild semi
 fqb27p06 fqi27p06.pdf pdf_icon

FQI27N25TU

October 2008QFETFQB27P06 / FQI27P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 33 nC)planar stripe, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especia

SHOW MORE

Datasheet: FQI15P12TU , FQI16N25CTU , FQI17N08LTU , FQI17N08TU , FQI17P06TU , FQI19N20CTU , FQI19N20TU , FQI1P50TU , IRFB4110 , FQI27P06TU , FQI2N30TU , FQI2N90TU , FQI2NA90TU , FQI2P25TU , FQI34P10TU , FQI3N25TU , FQI3N30TU .

History: APT4080BN | 25N10G-TM3-T

Keywords - FQI27N25TU MOSFET datasheet

 FQI27N25TU cross reference
 FQI27N25TU equivalent finder
 FQI27N25TU lookup
 FQI27N25TU substitution
 FQI27N25TU replacement

 

 
Back to Top

 


 
.