FQI2N90TU Todos los transistores

 

FQI2N90TU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQI2N90TU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 85 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7.2 Ohm
   Paquete / Cubierta: I2-PAK
 

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FQI2N90TU Datasheet (PDF)

 ..1. Size:754K  fairchild semi
 fqb2n90tm fqi2n90tu.pdf pdf_icon

FQI2N90TU

April 2000TMQFETQFETQFETQFETFQB2N90 / FQI2N90900V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.2A, 900V, RDS(on) = 7.2 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technolo

 9.1. Size:321K  fairchild semi
 fqi2n80tu.pdf pdf_icon

FQI2N90TU

I2-PAK Tube Packing DataI2-PAK Tube Packing Configuration: Figure 1.0Packaging Description:50 units per TubeI2-PAK parts are shipped in tube. The tube is made of PVC plastic treated with anti-static agent.These tubes in standard option are placed inside a dissipative plastic bubble sheet, barcode labeled, and placed inside a box made of recyclable corrugated paper. One box con

 9.2. Size:705K  fairchild semi
 fqb2na90tm fqi2na90tu.pdf pdf_icon

FQI2N90TU

September 2000TMQFETQFETQFETQFETFQB2NA90 / FQI2NA90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 900V, RDS(on) = 5.8 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced tech

 9.3. Size:741K  fairchild semi
 fqb2n30tm fqi2n30tu.pdf pdf_icon

FQI2N90TU

May 2000TMQFETQFETQFETQFETFQB2N30 / FQI2N30300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.1A, 300V, RDS(on) = 3.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 3.7 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology h

MOSTRAR MÁS

Otros transistores... FQI17N08TU , FQI17P06TU , FQI19N20CTU , FQI19N20TU , FQI1P50TU , FQI27N25TU , FQI27P06TU , FQI2N30TU , IRFB4115 , FQI2NA90TU , FQI2P25TU , FQI34P10TU , FQI3N25TU , FQI3N30TU , FQI3N40TU , FQI3N90TU , FQI3P20TU .

History: HGT025N10A | AP80N03GP | 2SK786 | IXTK80N25 | WFF630 | RJK4502DJE | APT904R2BN

 

 
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