FQI2N90TU Specs and Replacement

Type Designator: FQI2N90TU

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 7.2 Ohm

Package: I2-PAK

FQI2N90TU substitution

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FQI2N90TU datasheet

 ..1. Size:754K  fairchild semi
 fqb2n90tm fqi2n90tu.pdf pdf_icon

FQI2N90TU

April 2000 TM QFET QFET QFET QFET FQB2N90 / FQI2N90 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.2A, 900V, RDS(on) = 7.2 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technolo... See More ⇒

 9.1. Size:321K  fairchild semi
 fqi2n80tu.pdf pdf_icon

FQI2N90TU

I2-PAK Tube Packing Data I2-PAK Tube Packing Configuration Figure 1.0 Packaging Description 50 units per Tube I2-PAK parts are shipped in tube. The tube is made of PVC plastic treated with anti-static agent.These tubes in standard option are placed inside a dissipative plastic bubble sheet, barcode labeled, and placed inside a box made of recyclable corrugated paper. One box con... See More ⇒

 9.2. Size:705K  fairchild semi
 fqb2na90tm fqi2na90tu.pdf pdf_icon

FQI2N90TU

September 2000 TM QFET QFET QFET QFET FQB2NA90 / FQI2NA90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 900V, RDS(on) = 5.8 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced tech... See More ⇒

 9.3. Size:741K  fairchild semi
 fqb2n30tm fqi2n30tu.pdf pdf_icon

FQI2N90TU

May 2000 TM QFET QFET QFET QFET FQB2N30 / FQI2N30 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.1A, 300V, RDS(on) = 3.7 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 3.7 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology h... See More ⇒

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Detailed specifications: FQI17N08TU, FQI17P06TU, FQI19N20CTU, FQI19N20TU, FQI1P50TU, FQI27N25TU, FQI27P06TU, FQI2N30TU, P55NF06, FQI2NA90TU, FQI2P25TU, FQI34P10TU, FQI3N25TU, FQI3N30TU, FQI3N40TU, FQI3N90TU, FQI3P20TU

Keywords - FQI2N90TU MOSFET specs

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