FQI34P10TU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQI34P10TU

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 155 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 33.5 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 250 nS

Cossⓘ - Capacitancia de salida: 730 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm

Encapsulados: I2-PAK

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FQI34P10TU datasheet

 ..1. Size:751K  fairchild semi
 fqb34p10tm fqi34p10tu.pdf pdf_icon

FQI34P10TU

QFET FQB34P10 / FQI34P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -33.5A, -100V, RDS(on) = 0.06 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 170 pF) This advanced technology has been especially tail

 6.1. Size:781K  fairchild semi
 fqb34p10 fqi34p10.pdf pdf_icon

FQI34P10TU

QFET FQB34P10 / FQI34P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -33.5A, -100V, RDS(on) = 0.06 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 170 pF) This advanced technology has been especially tail

 9.1. Size:1876K  fairchild semi
 fqb34n20 fqi34n20.pdf pdf_icon

FQI34P10TU

October 2008 QFET FQB34N20 / FQI34N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 55 pF) This advanced technology has been especia

 9.2. Size:1051K  fairchild semi
 fqb34n20l fqi34n20l.pdf pdf_icon

FQI34P10TU

October 2008 QFET FQB34N20L / FQI34N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 55 nC) planar stripe, DMOS technology. Low Crss ( typical 52 pF) This advanced technology has been

MOSTRAR MÁS

Otros transistores... FQI19N20TU, FQI1P50TU, FQI27N25TU, FQI27P06TU, FQI2N30TU, FQI2N90TU, FQI2NA90TU, FQI2P25TU, IRFP250N, FQI3N25TU, FQI3N30TU, FQI3N40TU, FQI3N90TU, FQI3P20TU, FQI3P50TU, FQI47P06TU, FQI4N20TU