Справочник MOSFET. FQI34P10TU

 

FQI34P10TU Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQI34P10TU
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 155 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 33.5 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 250 ns
   Cossⓘ - Выходная емкость: 730 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
   Тип корпуса: I2-PAK
     - подбор MOSFET транзистора по параметрам

 

FQI34P10TU Datasheet (PDF)

 ..1. Size:751K  fairchild semi
 fqb34p10tm fqi34p10tu.pdf pdf_icon

FQI34P10TU

QFETFQB34P10 / FQI34P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -33.5A, -100V, RDS(on) = 0.06 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 85 nC)planar stripe, DMOS technology. Low Crss ( typical 170 pF)This advanced technology has been especially tail

 6.1. Size:781K  fairchild semi
 fqb34p10 fqi34p10.pdf pdf_icon

FQI34P10TU

QFETFQB34P10 / FQI34P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -33.5A, -100V, RDS(on) = 0.06 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 85 nC)planar stripe, DMOS technology. Low Crss ( typical 170 pF)This advanced technology has been especially tail

 9.1. Size:1876K  fairchild semi
 fqb34n20 fqi34n20.pdf pdf_icon

FQI34P10TU

October 2008QFETFQB34N20 / FQI34N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 55 pF)This advanced technology has been especia

 9.2. Size:1051K  fairchild semi
 fqb34n20l fqi34n20l.pdf pdf_icon

FQI34P10TU

October 2008QFETFQB34N20L / FQI34N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 55 nC)planar stripe, DMOS technology. Low Crss ( typical 52 pF)This advanced technology has been

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History: RJK0855DPB | DMN66D0LW | RU205C | OSS60R190FF | SSM5P16FU | SM2314 | SSF2814EH2

 

 
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