FQI34P10TU - аналоги и даташиты транзистора

 

FQI34P10TU - Даташиты. Аналоги. Основные параметры


   Наименование производителя: FQI34P10TU
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 155 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 33.5 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 250 ns
   Cossⓘ - Выходная емкость: 730 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
   Тип корпуса: I2-PAK
 

 Аналог (замена) для FQI34P10TU

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQI34P10TU Datasheet (PDF)

 ..1. Size:751K  fairchild semi
 fqb34p10tm fqi34p10tu.pdf pdf_icon

FQI34P10TU

QFETFQB34P10 / FQI34P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -33.5A, -100V, RDS(on) = 0.06 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 85 nC)planar stripe, DMOS technology. Low Crss ( typical 170 pF)This advanced technology has been especially tail

 6.1. Size:781K  fairchild semi
 fqb34p10 fqi34p10.pdf pdf_icon

FQI34P10TU

QFETFQB34P10 / FQI34P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -33.5A, -100V, RDS(on) = 0.06 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 85 nC)planar stripe, DMOS technology. Low Crss ( typical 170 pF)This advanced technology has been especially tail

 9.1. Size:1876K  fairchild semi
 fqb34n20 fqi34n20.pdf pdf_icon

FQI34P10TU

October 2008QFETFQB34N20 / FQI34N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 55 pF)This advanced technology has been especia

 9.2. Size:1051K  fairchild semi
 fqb34n20l fqi34n20l.pdf pdf_icon

FQI34P10TU

October 2008QFETFQB34N20L / FQI34N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 55 nC)planar stripe, DMOS technology. Low Crss ( typical 52 pF)This advanced technology has been

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FQI19N20TU , FQI1P50TU , FQI27N25TU , FQI27P06TU , FQI2N30TU , FQI2N90TU , FQI2NA90TU , FQI2P25TU , AON7408 , FQI3N25TU , FQI3N30TU , FQI3N40TU , FQI3N90TU , FQI3P20TU , FQI3P50TU , FQI47P06TU , FQI4N20TU .

History: NCEP0260D | 2SJ169

 

 
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