FQI34P10TU. Аналоги и основные параметры

Наименование производителя: FQI34P10TU

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 155 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 25 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 33.5 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 250 ns

Cossⓘ - Выходная емкость: 730 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm

Тип корпуса: I2-PAK

Аналог (замена) для FQI34P10TU

- подборⓘ MOSFET транзистора по параметрам

 

FQI34P10TU даташит

 ..1. Size:751K  fairchild semi
 fqb34p10tm fqi34p10tu.pdf pdf_icon

FQI34P10TU

QFET FQB34P10 / FQI34P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -33.5A, -100V, RDS(on) = 0.06 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 170 pF) This advanced technology has been especially tail

 6.1. Size:781K  fairchild semi
 fqb34p10 fqi34p10.pdf pdf_icon

FQI34P10TU

QFET FQB34P10 / FQI34P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -33.5A, -100V, RDS(on) = 0.06 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 170 pF) This advanced technology has been especially tail

 9.1. Size:1876K  fairchild semi
 fqb34n20 fqi34n20.pdf pdf_icon

FQI34P10TU

October 2008 QFET FQB34N20 / FQI34N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 55 pF) This advanced technology has been especia

 9.2. Size:1051K  fairchild semi
 fqb34n20l fqi34n20l.pdf pdf_icon

FQI34P10TU

October 2008 QFET FQB34N20L / FQI34N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 55 nC) planar stripe, DMOS technology. Low Crss ( typical 52 pF) This advanced technology has been

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