FQI3N40TU Todos los transistores

 

FQI3N40TU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQI3N40TU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 55 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 35 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
   Paquete / Cubierta: I2-PAK
 

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FQI3N40TU Datasheet (PDF)

 ..1. Size:730K  fairchild semi
 fqb3n40tm fqi3n40tu.pdf pdf_icon

FQI3N40TU

April 2000TMQFETQFETQFETQFETFQB3N40 / FQI3N40400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.5A, 400V, RDS(on) = 3.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.2 pF)This advanced technolog

 9.1. Size:621K  fairchild semi
 fqb3n25tm fqi3n25tu.pdf pdf_icon

FQI3N40TU

November 2000TMQFETQFETQFETQFETFQB3N25 / FQI3N25250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 250V, RDS(on) = 2.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.7 pF)This advanced technolo

 9.2. Size:695K  fairchild semi
 fqb3n90tm fqi3n90tu.pdf pdf_icon

FQI3N40TU

September 2000TMQFETQFETQFETQFETFQB3N90 / FQI3N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.6A, 900V, RDS(on) = 4.25 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 8.0 pF)This advanced techn

 9.3. Size:718K  fairchild semi
 fqb3n30tm fqi3n30tu.pdf pdf_icon

FQI3N40TU

April 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.2A, 300V, RDS(on) = 2.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.5 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology

MOSTRAR MÁS

Otros transistores... FQI27P06TU , FQI2N30TU , FQI2N90TU , FQI2NA90TU , FQI2P25TU , FQI34P10TU , FQI3N25TU , FQI3N30TU , 2N7000 , FQI3N90TU , FQI3P20TU , FQI3P50TU , FQI47P06TU , FQI4N20TU , FQI4N25TU , FQI4N90TU , FQI4P40TU .

History: STU5025NL2

 

 
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