All MOSFET. FQI3N40TU Equivalents Search

 

FQI3N40TU Specs and Replacement


   Type Designator: FQI3N40TU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: I2-PAK
 

 FQI3N40TU substitution

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FQI3N40TU Specs

 ..1. Size:730K  fairchild semi
 fqb3n40tm fqi3n40tu.pdf pdf_icon

FQI3N40TU

April 2000 TM QFET QFET QFET QFET FQB3N40 / FQI3N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.5A, 400V, RDS(on) = 3.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.2 pF) This advanced technolog... See More ⇒

 9.1. Size:621K  fairchild semi
 fqb3n25tm fqi3n25tu.pdf pdf_icon

FQI3N40TU

November 2000 TM QFET QFET QFET QFET FQB3N25 / FQI3N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 250V, RDS(on) = 2.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.7 pF) This advanced technolo... See More ⇒

 9.2. Size:695K  fairchild semi
 fqb3n90tm fqi3n90tu.pdf pdf_icon

FQI3N40TU

September 2000 TM QFET QFET QFET QFET FQB3N90 / FQI3N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.6A, 900V, RDS(on) = 4.25 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 8.0 pF) This advanced techn... See More ⇒

 9.3. Size:718K  fairchild semi
 fqb3n30tm fqi3n30tu.pdf pdf_icon

FQI3N40TU

April 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.2A, 300V, RDS(on) = 2.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.5 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology... See More ⇒

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Detailed specifications: FQI27P06TU , FQI2N30TU , FQI2N90TU , FQI2NA90TU , FQI2P25TU , FQI34P10TU , FQI3N25TU , FQI3N30TU , AON7408 , FQI3N90TU , FQI3P20TU , FQI3P50TU , FQI47P06TU , FQI4N20TU , FQI4N25TU , FQI4N90TU , FQI4P40TU .

History: FQI2P25TU

Keywords - FQI3N40TU MOSFET specs

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