All MOSFET. FQI3N40TU Datasheet

 

FQI3N40TU MOSFET. Datasheet pdf. Equivalent

Type Designator: FQI3N40TU

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 55 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 2.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 6 nC

Rise Time (tr): 40 nS

Drain-Source Capacitance (Cd): 35 pF

Maximum Drain-Source On-State Resistance (Rds): 5 Ohm

Package: I2-PAK

FQI3N40TU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQI3N40TU Datasheet (PDF)

1.1. fqi3n40tu.pdf Size:730K _fairchild_semi

FQI3N40TU
FQI3N40TU

April 2000 TM QFET QFET QFET QFET FQB3N40 / FQI3N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.5A, 400V, RDS(on) = 3.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.2 pF) This advanced technolog

5.1. fqb3n90 fqi3n90.pdf Size:697K _fairchild_semi

FQI3N40TU
FQI3N40TU

September 2000 TM QFET QFET QFET QFET FQB3N90 / FQI3N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.6A, 900V, RDS(on) = 4.25 ? @ VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 8.0 pF) This advanced technology has bee

5.2. fqi3n25tu.pdf Size:621K _fairchild_semi

FQI3N40TU
FQI3N40TU

November 2000 TM QFET QFET QFET QFET FQB3N25 / FQI3N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.8A, 250V, RDS(on) = 2.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.7 pF) This advanced technolo

 5.3. fqi3n90tu.pdf Size:695K _fairchild_semi

FQI3N40TU
FQI3N40TU

September 2000 TM QFET QFET QFET QFET FQB3N90 / FQI3N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.6A, 900V, RDS(on) = 4.25 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.0 pF) This advanced techn

5.4. fqi3n30tu.pdf Size:718K _fairchild_semi

FQI3N40TU
FQI3N40TU

April 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.2A, 300V, RDS(on) = 2.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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