FQI3N90TU Todos los transistores

 

FQI3N90TU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQI3N90TU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 130 W

Tensión drenaje-fuente (Vds): 900 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 3.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 20 nC

Tiempo de elevación (tr): 45 nS

Conductancia de drenaje-sustrato (Cd): 65 pF

Resistencia drenaje-fuente RDS(on): 4.25 Ohm

Empaquetado / Estuche: I2-PAK

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FQI3N90TU Datasheet (PDF)

1.1. fqi3n90tu.pdf Size:695K _fairchild_semi

FQI3N90TU
FQI3N90TU

September 2000 TM QFET QFET QFET QFET FQB3N90 / FQI3N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.6A, 900V, RDS(on) = 4.25 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.0 pF) This advanced techn

3.1. fqb3n90 fqi3n90.pdf Size:697K _fairchild_semi

FQI3N90TU
FQI3N90TU

September 2000 TM QFET QFET QFET QFET FQB3N90 / FQI3N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.6A, 900V, RDS(on) = 4.25 ? @ VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 8.0 pF) This advanced technology has bee

 5.1. fqi3n25tu.pdf Size:621K _fairchild_semi

FQI3N90TU
FQI3N90TU

November 2000 TM QFET QFET QFET QFET FQB3N25 / FQI3N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.8A, 250V, RDS(on) = 2.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.7 pF) This advanced technolo

5.2. fqi3n30tu.pdf Size:718K _fairchild_semi

FQI3N90TU
FQI3N90TU

April 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.2A, 300V, RDS(on) = 2.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology

 5.3. fqi3n40tu.pdf Size:730K _fairchild_semi

FQI3N90TU
FQI3N90TU

April 2000 TM QFET QFET QFET QFET FQB3N40 / FQI3N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.5A, 400V, RDS(on) = 3.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.2 pF) This advanced technolog

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