FQI3N90TU Specs and Replacement

Type Designator: FQI3N90TU

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.25 Ohm

Package: I2-PAK

FQI3N90TU substitution

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FQI3N90TU datasheet

 ..1. Size:695K  fairchild semi
 fqb3n90tm fqi3n90tu.pdf pdf_icon

FQI3N90TU

September 2000 TM QFET QFET QFET QFET FQB3N90 / FQI3N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.6A, 900V, RDS(on) = 4.25 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 8.0 pF) This advanced techn... See More ⇒

 7.1. Size:697K  fairchild semi
 fqb3n90 fqi3n90.pdf pdf_icon

FQI3N90TU

September 2000 TM QFET QFET QFET QFET FQB3N90 / FQI3N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.6A, 900V, RDS(on) = 4.25 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 8.0 pF) This advanced techn... See More ⇒

 9.1. Size:621K  fairchild semi
 fqb3n25tm fqi3n25tu.pdf pdf_icon

FQI3N90TU

November 2000 TM QFET QFET QFET QFET FQB3N25 / FQI3N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 250V, RDS(on) = 2.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.7 pF) This advanced technolo... See More ⇒

 9.2. Size:730K  fairchild semi
 fqb3n40tm fqi3n40tu.pdf pdf_icon

FQI3N90TU

April 2000 TM QFET QFET QFET QFET FQB3N40 / FQI3N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.5A, 400V, RDS(on) = 3.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.2 pF) This advanced technolog... See More ⇒

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Detailed specifications: FQI2N30TU, FQI2N90TU, FQI2NA90TU, FQI2P25TU, FQI34P10TU, FQI3N25TU, FQI3N30TU, FQI3N40TU, 2SK3878, FQI3P20TU, FQI3P50TU, FQI47P06TU, FQI4N20TU, FQI4N25TU, FQI4N90TU, FQI4P40TU, FQI50N06LTU

Keywords - FQI3N90TU MOSFET specs

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