FQI50N06LTU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQI50N06LTU
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 121 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 52.4 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VQgⓘ - Carga de la puerta: 24.5 nC
trⓘ - Tiempo de subida: 380 nS
Cossⓘ - Capacitancia de salida: 445 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm
Paquete / Cubierta: I2-PAK
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FQI50N06LTU Datasheet (PDF)
fqb50n06ltm fqi50n06ltu.pdf
October 2008QFETFQB50N06L / FQI50N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 24.5 nC)planar stripe, DMOS technology. Low Crss ( typical 90 pF)This advanced technology has bee
fqb50n06l fqi50n06l.pdf
October 2008QFETFQB50N06L / FQI50N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 24.5 nC)planar stripe, DMOS technology. Low Crss ( typical 90 pF)This advanced technology has bee
fqb50n06 fqi50n06.pdf
October 2008QFETFQB50N06 / FQI50N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially
fqb50n06tm fqi50n06tu.pdf
October 2008QFETFQB50N06 / FQI50N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially
fqb50n06 fqi50n06.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918