FQI50N06LTU MOSFET PDF: N-Ch, 60V, 52.4A. Full specification with pinout and replacement list

FQI50N06LTU PDF Specs and Replacement

   Type Designator: FQI50N06LTU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 121 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 52.4 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 380 nS
   Cossⓘ - Output Capacitance: 445 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: I2-PAK

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FQI50N06LTU PDF Specs

..1. Size:1022K fairchild semi
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October 2008 QFET FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 24.5 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has bee... See More ⇒

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6.1. Size:1038K fairchild semi
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October 2008 QFET FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially... See More ⇒

6.2. Size:1015K fairchild semi
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