All MOSFET. FQI50N06LTU Datasheet

 

FQI50N06LTU MOSFET. Datasheet pdf. Equivalent

Type Designator: FQI50N06LTU

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 121 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 52.4 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 24.5 nC

Rise Time (tr): 380 nS

Drain-Source Capacitance (Cd): 445 pF

Maximum Drain-Source On-State Resistance (Rds): 0.021 Ohm

Package: I2-PAK

FQI50N06LTU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQI50N06LTU Datasheet (PDF)

1.1. fqb50n06l fqi50n06l.pdf Size:1052K _fairchild_semi

FQI50N06LTU
FQI50N06LTU

October 2008 QFET FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 52.4A, 60V, RDS(on) = 0.021? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 24.5 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has been especially t

1.2. fqi50n06ltu.pdf Size:1022K _fairchild_semi

FQI50N06LTU
FQI50N06LTU

October 2008 QFET® FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 52.4A, 60V, RDS(on) = 0.021Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 24.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 90 pF) This advanced technology has bee

 2.1. fqb50n06 fqi50n06.pdf Size:1038K _fairchild_semi

FQI50N06LTU
FQI50N06LTU

October 2008 QFET FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially tailored to

2.2. fqi50n06tu.pdf Size:1015K _fairchild_semi

FQI50N06LTU
FQI50N06LTU

October 2008 QFET® FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 31 nC) planar stripe, DMOS technology. • Low Crss ( typical 65 pF) This advanced technology has been especially

Datasheet: GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .

 

 
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