FQI50N06LTU PDF and Equivalents Search

 

FQI50N06LTU Specs and Replacement

Type Designator: FQI50N06LTU

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 121 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 52.4 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 380 nS

Cossⓘ - Output Capacitance: 445 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: I2-PAK

FQI50N06LTU substitution

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FQI50N06LTU datasheet

 ..1. Size:1022K  fairchild semi
 fqb50n06ltm fqi50n06ltu.pdf pdf_icon

FQI50N06LTU

October 2008 QFET FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 24.5 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has bee... See More ⇒

 5.1. Size:1052K  fairchild semi
 fqb50n06l fqi50n06l.pdf pdf_icon

FQI50N06LTU

October 2008 QFET FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 24.5 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has bee... See More ⇒

 6.1. Size:1038K  fairchild semi
 fqb50n06 fqi50n06.pdf pdf_icon

FQI50N06LTU

October 2008 QFET FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially... See More ⇒

 6.2. Size:1015K  fairchild semi
 fqb50n06tm fqi50n06tu.pdf pdf_icon

FQI50N06LTU

October 2008 QFET FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially... See More ⇒

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Detailed specifications: FQI3N90TU , FQI3P20TU , FQI3P50TU , FQI47P06TU , FQI4N20TU , FQI4N25TU , FQI4N90TU , FQI4P40TU , IRFP260 , FQI50N06TU , FQI5N15TU , FQI5N20LTU , FQI5N20TU , FQI5N30TU , FQI5N40TU , FQI5N50CTU , FQI5N60CTU .

Keywords - FQI50N06LTU MOSFET specs

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