FQI6N50TU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQI6N50TU
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 98 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 5.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 65 nS
Cossⓘ - Capacitancia de salida: 85 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.3 Ohm
Encapsulados: I2-PAK
Búsqueda de reemplazo de FQI6N50TU MOSFET
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FQI6N50TU datasheet
fqb6n50 fqi6n50tu.pdf
April 2000 TM QFET QFET QFET QFET FQB6N50 / FQI6N50 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 5.5A, 500V, RDS(on) = 1.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 17 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology
fqb6n15tm fqi6n15tu.pdf
May 2000 TM QFET QFET QFET QFET FQB6N15 / FQI6N15 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.4A, 150V, RDS(on) = 0.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.5 nC) planar stripe, DMOS technology. Low Crss ( typical 9.6 pF) This advanced technology h
fqb6n60ctm fqi6n60ctu.pdf
QFET FQB6N60C / FQI6N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 600V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 7 pF) This advanced technology has been especially tailored to
Otros transistores... FQI5N30TU, FQI5N40TU, FQI5N50CTU, FQI5N60CTU, FQI5N80TU, FQI5P10TU, FQI6N15TU, FQI6N40CTU, CS150N03A8, FQI6N60CTU, FQI7N10LTU, FQI7N10TU, FQI7N60TU, FQI7N80TU, FQI8N60CTU, FQI8P10TU, FQI9N08LTU
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