Справочник MOSFET. FQI6N50TU

 

FQI6N50TU Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQI6N50TU
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 98 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 5.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 65 ns
   Cossⓘ - Выходная емкость: 85 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.3 Ohm
   Тип корпуса: I2-PAK
 

 Аналог (замена) для FQI6N50TU

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQI6N50TU Datasheet (PDF)

 ..1. Size:721K  fairchild semi
 fqb6n50 fqi6n50tu.pdf pdf_icon

FQI6N50TU

April 2000TMQFETQFETQFETQFETFQB6N50 / FQI6N50500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 500V, RDS(on) = 1.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 17 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology

 9.1. Size:729K  fairchild semi
 fqb6n40ctm fqi6n40ctu.pdf pdf_icon

FQI6N50TU

TMQFETFQB6N40C/FQI6N40C400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6A, 400V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to

 9.2. Size:759K  fairchild semi
 fqb6n15tm fqi6n15tu.pdf pdf_icon

FQI6N50TU

May 2000TMQFETQFETQFETQFETFQB6N15 / FQI6N15150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 6.4A, 150V, RDS(on) = 0.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.5 nC)planar stripe, DMOS technology. Low Crss ( typical 9.6 pF)This advanced technology h

 9.3. Size:681K  fairchild semi
 fqb6n60ctm fqi6n60ctu.pdf pdf_icon

FQI6N50TU

QFETFQB6N60C / FQI6N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 600V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC)planar stripe, DMOS technology. Low Crss ( typical 7 pF)This advanced technology has been especially tailored to

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Другие MOSFET... FQI5N30TU , FQI5N40TU , FQI5N50CTU , FQI5N60CTU , FQI5N80TU , FQI5P10TU , FQI6N15TU , FQI6N40CTU , IRLB4132 , FQI6N60CTU , FQI7N10LTU , FQI7N10TU , FQI7N60TU , FQI7N80TU , FQI8N60CTU , FQI8P10TU , FQI9N08LTU .

History: P0470ATFS | NVMFD5875NL | APT4020BVFRG | 2SK2672 | CEB12N6 | TSM6963SDCA | HFS640

 

 
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