FQI9N08TU Todos los transistores

 

FQI9N08TU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQI9N08TU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 40 W

Tensión drenaje-fuente (Vds): 80 V

Tensión compuerta-fuente (Vgs): 25 V

Corriente continua de drenaje (Id): 9.3 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 5.9 nC

Tiempo de elevación (tr): 28 nS

Conductancia de drenaje-sustrato (Cd): 70 pF

Resistencia drenaje-fuente RDS(on): 0.21 Ohm

Empaquetado / Estuche: I2-PAK

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FQI9N08TU Datasheet (PDF)

1.1. fqi9n08tu.pdf Size:545K _fairchild_semi

FQI9N08TU
FQI9N08TU

December 2000 TM QFET QFET QFET QFET FQB9N08 / FQI9N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.9 nC) planar stripe, DMOS technology. • Low Crss ( typical 13 pF) This advanced technology

3.1. fqi9n08ltu.pdf Size:610K _fairchild_semi

FQI9N08TU
FQI9N08TU

June 2000 TM QFET QFET QFET QFET FQB9N08L / FQI9N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.7 nC) planar stripe, DMOS technology. • Low Crss ( typical 16 pF) This advanced techno

 5.1. fqi9n50tu.pdf Size:705K _fairchild_semi

FQI9N08TU
FQI9N08TU

April 2000 TM QFET QFET QFET QFET FQB9N50 / FQI9N50 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 9.0A, 500V, RDS(on) = 0.73Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC) planar stripe, DMOS technology. • Low Crss ( typical 20 pF) This advanced technology

5.2. fqi9n15tu.pdf Size:778K _fairchild_semi

FQI9N08TU
FQI9N08TU

May 2000 TM QFET QFET QFET QFET FQB9N15 / FQI9N15 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 9.0A, 150V, RDS(on) = 0.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC) planar stripe, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology has

 5.3. fqi9n50ctu.pdf Size:796K _fairchild_semi

FQI9N08TU
FQI9N08TU

TM QFET FQB9N50C/FQI9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9 A, 500V, RDS(on) = 0.8 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC) planar stripe, DMOS technology. • Low Crss ( typical 24 pF) This advanced technology has been especially tailored to

5.4. fqi9n25ctu.pdf Size:869K _fairchild_semi

FQI9N08TU
FQI9N08TU

® QFET FQB9N25C/FQI9N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 8.8A, 250V, RDS(on) = 0.43Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 26.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 45.5 pF) This advanced technology has been especially tailore

 5.5. fqb9n50c fqi9n50c.pdf Size:796K _fairchild_semi

FQI9N08TU
FQI9N08TU

TM QFET FQB9N50C/FQI9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tailored to Fast switc

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