All MOSFET. FQI9N08TU Datasheet

 

FQI9N08TU Datasheet and Replacement


   Type Designator: FQI9N08TU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 9.3 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: I2-PAK
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FQI9N08TU Datasheet (PDF)

 ..1. Size:545K  fairchild semi
 fqb9n08tm fqi9n08tu.pdf pdf_icon

FQI9N08TU

December 2000TMQFETQFETQFETQFETFQB9N08 / FQI9N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.3A, 80V, RDS(on) = 0.21 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.9 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology

 7.1. Size:610K  fairchild semi
 fqi9n08ltu.pdf pdf_icon

FQI9N08TU

June 2000TMQFETQFETQFETQFETFQB9N08L / FQI9N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.3A, 80V, RDS(on) = 0.21 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.7 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced techno

 9.1. Size:869K  fairchild semi
 fqb9n25ctm fqi9n25ctu.pdf pdf_icon

FQI9N08TU

QFETFQB9N25C/FQI9N25C250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 26.5 nC)planar stripe, DMOS technology. Low Crss ( typical 45.5 pF)This advanced technology has been especially tailore

 9.2. Size:796K  fairchild semi
 fqb9n50ctm fqb9n50c fqi9n50c fqi9n50ctu.pdf pdf_icon

FQI9N08TU

TMQFETFQB9N50C/FQI9N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 24 pF)This advanced technology has been especially tailored to

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Keywords - FQI9N08TU MOSFET datasheet

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