All MOSFET. FQI9N08TU Datasheet

 

FQI9N08TU MOSFET. Datasheet pdf. Equivalent

Type Designator: FQI9N08TU

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 9.3 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 5.9 nC

Rise Time (tr): 28 nS

Drain-Source Capacitance (Cd): 70 pF

Maximum Drain-Source On-State Resistance (Rds): 0.21 Ohm

Package: I2-PAK

FQI9N08TU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQI9N08TU Datasheet (PDF)

1.1. fqi9n08tu.pdf Size:545K _fairchild_semi

FQI9N08TU
FQI9N08TU

December 2000 TM QFET QFET QFET QFET FQB9N08 / FQI9N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.9 nC) planar stripe, DMOS technology. • Low Crss ( typical 13 pF) This advanced technology

3.1. fqi9n08ltu.pdf Size:610K _fairchild_semi

FQI9N08TU
FQI9N08TU

June 2000 TM QFET QFET QFET QFET FQB9N08L / FQI9N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.7 nC) planar stripe, DMOS technology. • Low Crss ( typical 16 pF) This advanced techno

 5.1. fqi9n50tu.pdf Size:705K _fairchild_semi

FQI9N08TU
FQI9N08TU

April 2000 TM QFET QFET QFET QFET FQB9N50 / FQI9N50 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 9.0A, 500V, RDS(on) = 0.73Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC) planar stripe, DMOS technology. • Low Crss ( typical 20 pF) This advanced technology

5.2. fqi9n15tu.pdf Size:778K _fairchild_semi

FQI9N08TU
FQI9N08TU

May 2000 TM QFET QFET QFET QFET FQB9N15 / FQI9N15 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 9.0A, 150V, RDS(on) = 0.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC) planar stripe, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology has

 5.3. fqi9n50ctu.pdf Size:796K _fairchild_semi

FQI9N08TU
FQI9N08TU

TM QFET FQB9N50C/FQI9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9 A, 500V, RDS(on) = 0.8 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC) planar stripe, DMOS technology. • Low Crss ( typical 24 pF) This advanced technology has been especially tailored to

5.4. fqi9n25ctu.pdf Size:869K _fairchild_semi

FQI9N08TU
FQI9N08TU

® QFET FQB9N25C/FQI9N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 8.8A, 250V, RDS(on) = 0.43Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 26.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 45.5 pF) This advanced technology has been especially tailore

 5.5. fqb9n50c fqi9n50c.pdf Size:796K _fairchild_semi

FQI9N08TU
FQI9N08TU

TM QFET FQB9N50C/FQI9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tailored to Fast switc

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