FQI9N50TU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQI9N50TU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 147 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 95 nS

Cossⓘ - Capacitancia de salida: 160 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.73 Ohm

Encapsulados: I2-PAK

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FQI9N50TU datasheet

 ..1. Size:705K  fairchild semi
 fqb9n50tm fqi9n50tu.pdf pdf_icon

FQI9N50TU

April 2000 TM QFET QFET QFET QFET FQB9N50 / FQI9N50 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.0A, 500V, RDS(on) = 0.73 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology

 7.1. Size:796K  fairchild semi
 fqb9n50ctm fqb9n50c fqi9n50c fqi9n50ctu.pdf pdf_icon

FQI9N50TU

TM QFET FQB9N50C/FQI9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tailored to

 9.1. Size:610K  fairchild semi
 fqi9n08ltu.pdf pdf_icon

FQI9N50TU

June 2000 TM QFET QFET QFET QFET FQB9N08L / FQI9N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.3A, 80V, RDS(on) = 0.21 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.7 nC) planar stripe, DMOS technology. Low Crss ( typical 16 pF) This advanced techno

 9.2. Size:869K  fairchild semi
 fqb9n25ctm fqi9n25ctu.pdf pdf_icon

FQI9N50TU

QFET FQB9N25C/FQI9N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 26.5 nC) planar stripe, DMOS technology. Low Crss ( typical 45.5 pF) This advanced technology has been especially tailore

MOSTRAR MÁS

Otros transistores... FQI7N80TU, FQI8N60CTU, FQI8P10TU, FQI9N08LTU, FQI9N08TU, FQI9N15TU, FQI9N25CTU, FQI9N50CTU, 5N60, FQL50N40, FQN1N50CBU, FQN1N50CTA, FQN1N60CBU, FQN1N60CTA, FQNL1N50BBU, FQNL1N50BTA, FQNL2N50BBU