All MOSFET. FQI9N50TU Datasheet

 

FQI9N50TU Datasheet and Replacement


   Type Designator: FQI9N50TU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm
   Package: I2-PAK
 

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FQI9N50TU Datasheet (PDF)

 ..1. Size:705K  fairchild semi
 fqb9n50tm fqi9n50tu.pdf pdf_icon

FQI9N50TU

April 2000TMQFETQFETQFETQFETFQB9N50 / FQI9N50500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 500V, RDS(on) = 0.73 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology

 7.1. Size:796K  fairchild semi
 fqb9n50ctm fqb9n50c fqi9n50c fqi9n50ctu.pdf pdf_icon

FQI9N50TU

TMQFETFQB9N50C/FQI9N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 24 pF)This advanced technology has been especially tailored to

 9.1. Size:610K  fairchild semi
 fqi9n08ltu.pdf pdf_icon

FQI9N50TU

June 2000TMQFETQFETQFETQFETFQB9N08L / FQI9N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.3A, 80V, RDS(on) = 0.21 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.7 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced techno

 9.2. Size:869K  fairchild semi
 fqb9n25ctm fqi9n25ctu.pdf pdf_icon

FQI9N50TU

QFETFQB9N25C/FQI9N25C250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 26.5 nC)planar stripe, DMOS technology. Low Crss ( typical 45.5 pF)This advanced technology has been especially tailore

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Datasheet: FQI7N80TU , FQI8N60CTU , FQI8P10TU , FQI9N08LTU , FQI9N08TU , FQI9N15TU , FQI9N25CTU , FQI9N50CTU , 13N50 , FQL50N40 , FQN1N50CBU , FQN1N50CTA , FQN1N60CBU , FQN1N60CTA , FQNL1N50BBU , FQNL1N50BTA , FQNL2N50BBU .

History: NTMFS4H013NF | NCE65N760 | DHESJ17N65 | STL38N65M5 | AFN501DEA | PT530BA | SUD50N02-04P

Keywords - FQI9N50TU MOSFET datasheet

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