FQP17N08L Todos los transistores

 

FQP17N08L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQP17N08L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 65 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 16.5 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 290 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: TO-220
 

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FQP17N08L Datasheet (PDF)

 ..1. Size:563K  fairchild semi
 fqp17n08l.pdf pdf_icon

FQP17N08L

December 2000TMQFETQFETQFETQFETFQP17N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 16.5A, 80V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.8 nC)planar stripe, DMOS technology. Low Crss ( typical 29 pF)This advanced technology i

 6.1. Size:605K  fairchild semi
 fqp17n08.pdf pdf_icon

FQP17N08L

January 2001TMQFETQFETQFETQFETFQP17N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 16.5A, 80V, RDS(on) = 0.115 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 28 pF)This advanced technology has been

 8.1. Size:728K  fairchild semi
 fqp17n40.pdf pdf_icon

FQP17N08L

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 16A, 400V, RDS(on) = 0.27 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been

 9.1. Size:668K  fairchild semi
 fqp17p10.pdf pdf_icon

FQP17N08L

TMQFETFQP17P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -16.5A, -100V, RDS(on) = 0.19 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced technology has been especially tailored to

MOSTRAR MÁS

Otros transistores... FQP10N60 , FQP10N60CF , FQP11N40 , FQP11N50CF , FQP12N60 , FQP13N06 , FQP16N15 , FQP17N08 , STP65NF06 , FQP18N20V2 , FQP18N50V2 , FQP19N10 , FQP19N10L , FQP19N20CTSTU , FQP19N20L , FQP1N50 , FQP1N60 .

History: CEU83A3 | LSGE10R080W3 | SPP80N05L | TD422BL | FMV10N80E | HUF75831SK8T | FDM100-0045SP

 

 
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