Справочник MOSFET. FQP17N08L

 

FQP17N08L Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQP17N08L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 65 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 16.5 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 290 ns
   Cossⓘ - Выходная емкость: 120 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: TO-220
     - подбор MOSFET транзистора по параметрам

 

FQP17N08L Datasheet (PDF)

 ..1. Size:563K  fairchild semi
 fqp17n08l.pdf pdf_icon

FQP17N08L

December 2000TMQFETQFETQFETQFETFQP17N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 16.5A, 80V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.8 nC)planar stripe, DMOS technology. Low Crss ( typical 29 pF)This advanced technology i

 6.1. Size:605K  fairchild semi
 fqp17n08.pdf pdf_icon

FQP17N08L

January 2001TMQFETQFETQFETQFETFQP17N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 16.5A, 80V, RDS(on) = 0.115 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 28 pF)This advanced technology has been

 8.1. Size:728K  fairchild semi
 fqp17n40.pdf pdf_icon

FQP17N08L

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 16A, 400V, RDS(on) = 0.27 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been

 9.1. Size:668K  fairchild semi
 fqp17p10.pdf pdf_icon

FQP17N08L

TMQFETFQP17P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -16.5A, -100V, RDS(on) = 0.19 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced technology has been especially tailored to

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