FQP33N10L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQP33N10L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 127 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 33 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 470 nS
Cossⓘ - Capacitancia de salida: 305 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
Encapsulados: TO-220
Búsqueda de reemplazo de FQP33N10L MOSFET
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FQP33N10L datasheet
fqp33n10l.pdf
September 2000 TM QFET QFET QFET QFET FQP33N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 33A, 100V, RDS(on) = 0.052 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 70 pF) This advanced technology
fqp33n10.pdf
April 2000 TM QFET QFET QFET QFET FQP33N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 33A, 100V, RDS(on) = 0.052 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar stripe, DMOS technology. Low Crss ( typical 62 pF) This advanced technology has been e
fqp33n10.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... FQP22P10, FQP27P06SW82127, FQP2N30, FQP2N50, FQP2N60, FQP2NA90, FQP2P25, FQP32N12V2, IRF840, FQP34N20L, FQP3N25, FQP3N40, FQP3N60, FQP3N80, FQP3N90, FQP44N08, FQP44N10F
History: UT75N02
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