FQP3N25 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQP3N25
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 2.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 30 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de FQP3N25 MOSFET
FQP3N25 Datasheet (PDF)
fqp3n25.pdf

November 2000TMQFETQFETQFETQFETFQP3N25250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 250V, RDS(on) = 2.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.7 pF)This advanced technology has bee
fqp3n80c fqpf3n80c.pdf

TMQFETFQP3N80C/FQPF3N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 800V, RDS(on) = 4.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has been especially tailored t
fqp3n60.pdf

April 2000TMQFETQFETQFETQFETFQP3N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 600V, RDS(on) = 3.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has been es
fqp3n40.pdf

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.5A, 400V, RDS(on) = 3.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.2 pF)This advanced technology has been
Otros transistores... FQP2N30 , FQP2N50 , FQP2N60 , FQP2NA90 , FQP2P25 , FQP32N12V2 , FQP33N10L , FQP34N20L , IRF540 , FQP3N40 , FQP3N60 , FQP3N80 , FQP3N90 , FQP44N08 , FQP44N10F , FQP4N20 , FQP4N25 .
History: HGP059N12S | IPD60R1K5CE | NTMFS4C054N | CHM5813ESQ2GP | SI4833ADY | CHM4435AZGP | HGB037N10T
History: HGP059N12S | IPD60R1K5CE | NTMFS4C054N | CHM5813ESQ2GP | SI4833ADY | CHM4435AZGP | HGB037N10T



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
bc547 transistor | bd139 | 2n4401 datasheet | irf640 | irf840 | irf740 | c945 transistor | irf640n