FQP3N25 Datasheet. Specs and Replacement

Type Designator: FQP3N25  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: TO-220

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FQP3N25 substitution

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FQP3N25 datasheet

 ..1. Size:612K  fairchild semi
fqp3n25.pdf pdf_icon

FQP3N25

November 2000 TM QFET QFET QFET QFET FQP3N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 250V, RDS(on) = 2.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.7 pF) This advanced technology has bee... See More ⇒

 9.1. Size:810K  fairchild semi
fqp3n80c fqpf3n80c.pdf pdf_icon

FQP3N25

TM QFET FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 800V, RDS(on) = 4.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored t... See More ⇒

 9.2. Size:567K  fairchild semi
fqp3n60.pdf pdf_icon

FQP3N25

April 2000 TM QFET QFET QFET QFET FQP3N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 600V, RDS(on) = 3.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been es... See More ⇒

 9.3. Size:707K  fairchild semi
fqp3n40.pdf pdf_icon

FQP3N25

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.5A, 400V, RDS(on) = 3.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.2 pF) This advanced technology has been... See More ⇒

Detailed specifications: FQP2N30, FQP2N50, FQP2N60, FQP2NA90, FQP2P25, FQP32N12V2, FQP33N10L, FQP34N20L, IRF1404, FQP3N40, FQP3N60, FQP3N80, FQP3N90, FQP44N08, FQP44N10F, FQP4N20, FQP4N25

Keywords - FQP3N25 MOSFET specs

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