FQP44N08 Todos los transistores

 

FQP44N08 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQP44N08
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 127 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 44 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 170 nS
   Cossⓘ - Capacitancia de salida: 400 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.034 Ohm
   Paquete / Cubierta: TO-220
 

 Búsqueda de reemplazo de FQP44N08 MOSFET

   - Selección ⓘ de transistores por parámetros

 

FQP44N08 Datasheet (PDF)

 ..1. Size:669K  fairchild semi
 fqp44n08.pdf pdf_icon

FQP44N08

August 2000TMQFETQFETQFETQFETFQP44N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 44A, 80V, RDS(on) = 0.034 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar stripe, DMOS technology. Low Crss ( typical 90 pF)This advanced technology has been es

 8.1. Size:591K  fairchild semi
 fqp44n10f.pdf pdf_icon

FQP44N08

December 2000TMQFETQFETQFETQFETFQP44N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 43.5A, 100V, RDS(on) = 0.039 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology is es

 8.2. Size:607K  fairchild semi
 fqp44n10.pdf pdf_icon

FQP44N08

December 2000TMQFETQFETQFETQFETFQP44N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 43.5A, 100V, RDS(on) = 0.039 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology is es

Otros transistores... FQP32N12V2 , FQP33N10L , FQP34N20L , FQP3N25 , FQP3N40 , FQP3N60 , FQP3N80 , FQP3N90 , IRFP460 , FQP44N10F , FQP4N20 , FQP4N25 , FQP4N50 , FQP4N60 , FQP4N90 , FQP4P25 , FQP55N06 .

History: HY1607V | RFP12P10 | AM4962NE | SWP17N80K | SVS11N65SD2 | AM3458N | APM4427K

 

 
Back to Top

 


 
.