FQP44N08 Specs and Replacement
Type Designator: FQP44N08
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 127 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 44 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 170 nS
Cossⓘ - Output Capacitance: 400 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
Package: TO-220
FQP44N08 substitution
- MOSFET ⓘ Cross-Reference Search
FQP44N08 datasheet
fqp44n08.pdf
August 2000 TM QFET QFET QFET QFET FQP44N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 44A, 80V, RDS(on) = 0.034 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has been es... See More ⇒
fqp44n10f.pdf
December 2000 TM QFET QFET QFET QFET FQP44N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 43.5A, 100V, RDS(on) = 0.039 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology is es... See More ⇒
fqp44n10.pdf
December 2000 TM QFET QFET QFET QFET FQP44N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 43.5A, 100V, RDS(on) = 0.039 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology is es... See More ⇒
Detailed specifications: FQP32N12V2, FQP33N10L, FQP34N20L, FQP3N25, FQP3N40, FQP3N60, FQP3N80, FQP3N90, IRF640, FQP44N10F, FQP4N20, FQP4N25, FQP4N50, FQP4N60, FQP4N90, FQP4P25, FQP55N06
Keywords - FQP44N08 MOSFET specs
FQP44N08 cross reference
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