FQP44N10F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQP44N10F  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 146 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 43.5 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 190 nS

Cossⓘ - Capacitancia de salida: 425 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.039 Ohm

Encapsulados: TO-220

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FQP44N10F datasheet

 ..1. Size:591K  fairchild semi
 fqp44n10f.pdf pdf_icon

FQP44N10F

December 2000 TM QFET QFET QFET QFET FQP44N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 43.5A, 100V, RDS(on) = 0.039 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology is es

 6.1. Size:607K  fairchild semi
 fqp44n10.pdf pdf_icon

FQP44N10F

December 2000 TM QFET QFET QFET QFET FQP44N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 43.5A, 100V, RDS(on) = 0.039 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology is es

 8.1. Size:669K  fairchild semi
 fqp44n08.pdf pdf_icon

FQP44N10F

August 2000 TM QFET QFET QFET QFET FQP44N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 44A, 80V, RDS(on) = 0.034 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has been es

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