FQP44N10F MOSFET. Datasheet pdf. Equivalent
Type Designator: FQP44N10F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 146 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 43.5 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 48 nC
trⓘ - Rise Time: 190 nS
Cossⓘ - Output Capacitance: 425 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
Package: TO-220
FQP44N10F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQP44N10F Datasheet (PDF)
fqp44n10f.pdf
December 2000TMQFETQFETQFETQFETFQP44N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 43.5A, 100V, RDS(on) = 0.039 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology is es
fqp44n10.pdf
December 2000TMQFETQFETQFETQFETFQP44N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 43.5A, 100V, RDS(on) = 0.039 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology is es
fqp44n08.pdf
August 2000TMQFETQFETQFETQFETFQP44N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 44A, 80V, RDS(on) = 0.034 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar stripe, DMOS technology. Low Crss ( typical 90 pF)This advanced technology has been es
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
