FQP6N80 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQP6N80

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 158 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 5.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 70 nS

Cossⓘ - Capacitancia de salida: 125 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.95 Ohm

Encapsulados: TO-220

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FQP6N80 datasheet

 ..1. Size:672K  fairchild semi
 fqp6n80.pdf pdf_icon

FQP6N80

September 2000 TM QFET FQP6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 800V, RDS(on) = 1.95 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tailo

 0.1. Size:889K  fairchild semi
 fqp6n80c fqpf6n80c.pdf pdf_icon

FQP6N80

TM QFET FQP6N80C/FQPF6N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 800V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 8 pF) This advanced technology has been especially tailored to

 0.2. Size:890K  onsemi
 fqp6n80c fqpf6n80c.pdf pdf_icon

FQP6N80

TM QFET FQP6N80C/FQPF6N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 800V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 8 pF) This advanced technology has been especially tailored to

 0.3. Size:262K  inchange semiconductor
 fqp6n80c.pdf pdf_icon

FQP6N80

isc N-Channel MOSFET Transistor FQP6N80C FEATURES Drain Current I = 22A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 2.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. AB

MOSTRAR MÁS

Otros transistores... FQP5P10, FQP5P20, FQP630TSTU, FQP6N15, FQP6N25, FQP6N50, FQP6N50C, FQP6N60, IRLB4132, IRF40B207, IRF40H210, IRF40R207, IRF4104L, IRF4104LPBF, IRF4104PBF, IRF4104SPBF, IRF4905LPBF