FQP6N80 Todos los transistores

 

FQP6N80 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQP6N80
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 158 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 70 nS
   Cossⓘ - Capacitancia de salida: 125 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.95 Ohm
   Paquete / Cubierta: TO-220
 

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FQP6N80 Datasheet (PDF)

 ..1. Size:672K  fairchild semi
 fqp6n80.pdf pdf_icon

FQP6N80

September 2000TMQFETFQP6N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.8A, 800V, RDS(on) = 1.95 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especially tailo

 0.1. Size:889K  fairchild semi
 fqp6n80c fqpf6n80c.pdf pdf_icon

FQP6N80

TMQFETFQP6N80C/FQPF6N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 800V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 8 pF)This advanced technology has been especially tailored to

 0.2. Size:890K  onsemi
 fqp6n80c fqpf6n80c.pdf pdf_icon

FQP6N80

TMQFETFQP6N80C/FQPF6N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 800V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 8 pF)This advanced technology has been especially tailored to

 0.3. Size:262K  inchange semiconductor
 fqp6n80c.pdf pdf_icon

FQP6N80

isc N-Channel MOSFET Transistor FQP6N80CFEATURESDrain Current : I = 22A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.AB

MOSTRAR MÁS

Otros transistores... FQP5P10 , FQP5P20 , FQP630TSTU , FQP6N15 , FQP6N25 , FQP6N50 , FQP6N50C , FQP6N60 , 5N60 , IRF40B207 , IRF40H210 , IRF40R207 , IRF4104L , IRF4104LPBF , IRF4104PBF , IRF4104SPBF , IRF4905LPBF .

History: LNND04R120 | P4004ED | OSG65R900AF | VSE003N04MSC-G | SSM6K06FU | 2N7002-G

 

 
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