FQP6N80 - аналоги и даташиты транзистора

 

FQP6N80 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: FQP6N80
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 158 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 5.8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 70 ns
   Cossⓘ - Выходная емкость: 125 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.95 Ohm
   Тип корпуса: TO-220
 

 Аналог (замена) для FQP6N80

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQP6N80 Datasheet (PDF)

 ..1. Size:672K  fairchild semi
 fqp6n80.pdf pdf_icon

FQP6N80

September 2000TMQFETFQP6N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.8A, 800V, RDS(on) = 1.95 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especially tailo

 0.1. Size:889K  fairchild semi
 fqp6n80c fqpf6n80c.pdf pdf_icon

FQP6N80

TMQFETFQP6N80C/FQPF6N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 800V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 8 pF)This advanced technology has been especially tailored to

 0.2. Size:890K  onsemi
 fqp6n80c fqpf6n80c.pdf pdf_icon

FQP6N80

TMQFETFQP6N80C/FQPF6N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 800V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 8 pF)This advanced technology has been especially tailored to

 0.3. Size:262K  inchange semiconductor
 fqp6n80c.pdf pdf_icon

FQP6N80

isc N-Channel MOSFET Transistor FQP6N80CFEATURESDrain Current : I = 22A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.AB

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