FQP6N80. Аналоги и основные параметры

Наименование производителя: FQP6N80

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 158 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 5.8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 70 ns

Cossⓘ - Выходная емкость: 125 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.95 Ohm

Тип корпуса: TO-220

Аналог (замена) для FQP6N80

- подборⓘ MOSFET транзистора по параметрам

 

FQP6N80 даташит

 ..1. Size:672K  fairchild semi
 fqp6n80.pdf pdf_icon

FQP6N80

September 2000 TM QFET FQP6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 800V, RDS(on) = 1.95 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tailo

 0.1. Size:889K  fairchild semi
 fqp6n80c fqpf6n80c.pdf pdf_icon

FQP6N80

TM QFET FQP6N80C/FQPF6N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 800V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 8 pF) This advanced technology has been especially tailored to

 0.2. Size:890K  onsemi
 fqp6n80c fqpf6n80c.pdf pdf_icon

FQP6N80

TM QFET FQP6N80C/FQPF6N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 800V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 8 pF) This advanced technology has been especially tailored to

 0.3. Size:262K  inchange semiconductor
 fqp6n80c.pdf pdf_icon

FQP6N80

isc N-Channel MOSFET Transistor FQP6N80C FEATURES Drain Current I = 22A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 2.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. AB

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