IRF40B207 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF40B207

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 95 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 340 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm

Encapsulados: TO-220AB

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IRF40B207 datasheet

 ..1. Size:537K  international rectifier
irf40b207.pdf pdf_icon

IRF40B207

StrongIRFET IRF40B207 HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 40V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 3.6m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 4.5m Resonant mode power supplies S OR-ing and redund

 ..2. Size:246K  inchange semiconductor
irf40b207.pdf pdf_icon

IRF40B207

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF40B207 IIRF40B207 FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIM

 9.1. Size:565K  1
irf40h210.pdf pdf_icon

IRF40B207

StrongIRFET IRF40H210 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. 1.4m Battery powered circuits max 1.7m Half-bridge and full-bridge topologies Synchronous rectifier applications ID (Silicon Limited) 201A Resonant mode power supplies

 9.2. Size:565K  international rectifier
irf40h210.pdf pdf_icon

IRF40B207

StrongIRFET IRF40H210 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. 1.4m Battery powered circuits max 1.7m Half-bridge and full-bridge topologies Synchronous rectifier applications ID (Silicon Limited) 201A Resonant mode power supplies

Otros transistores... FQP5P20, FQP630TSTU, FQP6N15, FQP6N25, FQP6N50, FQP6N50C, FQP6N60, FQP6N80, AO3401, IRF40H210, IRF40R207, IRF4104L, IRF4104LPBF, IRF4104PBF, IRF4104SPBF, IRF4905LPBF, IRF4905PBF