Справочник MOSFET. IRF40B207

 

IRF40B207 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF40B207
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 83 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.9 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 95 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 45 nC
   trⓘ - Время нарастания: 35 ns
   Cossⓘ - Выходная емкость: 340 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для IRF40B207

 

 

IRF40B207 Datasheet (PDF)

 ..1. Size:537K  international rectifier
 irf40b207.pdf

IRF40B207 IRF40B207

StrongIRFET IRF40B207 HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 40V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 3.6m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 4.5m Resonant mode power supplies S OR-ing and redund

 ..2. Size:246K  inchange semiconductor
 irf40b207.pdf

IRF40B207 IRF40B207

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF40B207IIRF40B207FEATURESStatic drain-source on-resistance:RDS(on) 4.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM

 9.1. Size:565K  1
 irf40h210.pdf

IRF40B207 IRF40B207

StrongIRFET IRF40H210 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. 1.4m Battery powered circuits max 1.7m Half-bridge and full-bridge topologies Synchronous rectifier applications ID (Silicon Limited) 201A Resonant mode power supplies

 9.2. Size:562K  international rectifier
 irf40h210.pdf

IRF40B207 IRF40B207

StrongIRFET IRF40H210 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. 1.4m Battery powered circuits max 1.7m Half-bridge and full-bridge topologies Synchronous rectifier applications ID (Silicon Limited) 201A Resonant mode power supplies

 9.3. Size:552K  international rectifier
 irf40r207.pdf

IRF40B207 IRF40B207

StrongIRFET IRF40R207 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 4.2m Half-bridge and full-bridge topologies max 5.1mG Synchronous rectifier applications ID (Silicon Limited) 90A Resonant mode power supplie

 9.4. Size:1158K  infineon
 irf40h233.pdf

IRF40B207 IRF40B207

IRF40H233MOSFETSSO8 dual (TDSON-8-4)StrongIRFET1Benefits82736 Optimized for broadest availability from distribution partners 45 175C junction temperature rated 100% UIL tested Product validation according to JEDEC standard Pb-Free ; RoHS Compliant ; Halogen-Free81726354Potential applications Brushed Motor drive applicatio

 9.5. Size:565K  infineon
 irf40h210.pdf

IRF40B207 IRF40B207

StrongIRFET IRF40H210 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. 1.4m Battery powered circuits max 1.7m Half-bridge and full-bridge topologies Synchronous rectifier applications ID (Silicon Limited) 201A Resonant mode power supplies

 9.6. Size:242K  inchange semiconductor
 irf40r207.pdf

IRF40B207 IRF40B207

isc N-Channel MOSFET Transistor IRF40R207, IIRF40R207FEATURESStatic drain-source on-resistance:RDS(on)5.1mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous rectifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

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