IRF5210PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF5210PBF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 200 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 86 nS

Cossⓘ - Capacitancia de salida: 790 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm

Encapsulados: TO-220AB

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IRF5210PBF datasheet

 ..1. Size:189K  international rectifier
 irf5210pbf.pdf pdf_icon

IRF5210PBF

PD - 95408 IRF5210PbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = -100V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.06 l P-Channel G l Fully Avalanche Rated ID = -40A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi

 7.1. Size:310K  international rectifier
 irf5210lpbf irf5210spbf.pdf pdf_icon

IRF5210PBF

PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = -100V l 150 C Operating Temperature l Fast Switching RDS(on) = 60m l Repetitive Avalanche Allowed up to Tjmax G l Some Parameters are Different from IRF5210S/L ID = -38A S l P-Channel l Lead-Free D D Description Features of this design are a 150 C

 7.2. Size:125K  international rectifier
 irf5210.pdf pdf_icon

IRF5210PBF

PD - 91434A IRF5210 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = -100V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.06 Fast Switching G P-Channel ID = -40A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-

 7.3. Size:186K  international rectifier
 irf5210s.pdf pdf_icon

IRF5210PBF

PD - 91405C IRF5210S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF5210S) VDSS = -100V Low-profile through-hole (IRF5210L) 175 C Operating Temperature RDS(on) = 0.06 Fast Switching G P-Channel ID = -40A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

MOSTRAR MÁS

Otros transistores... IRF4905PBF, IRF4905SPBF, IRF520NL, IRF520NLPBF, IRF520NPBF, IRF520S, IRF520SPBF, IRF5210LPBF, NCEP15T14, IRF5210SPBF, IRF5305LPBF, IRF5305PBF, IRF5305SPBF, IRF530NPBF, IRF530NSPBF, IRF530S, IRF540NLPBF