All MOSFET. IRF5210PBF Datasheet

 

IRF5210PBF Datasheet and Replacement


   Type Designator: IRF5210PBF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 86 nS
   Cossⓘ - Output Capacitance: 790 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO-220AB
 

 IRF5210PBF substitution

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IRF5210PBF Datasheet (PDF)

 ..1. Size:189K  international rectifier
irf5210pbf.pdf pdf_icon

IRF5210PBF

PD - 95408IRF5210PbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = -100Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.06l P-ChannelGl Fully Avalanche RatedID = -40Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achi

 7.1. Size:310K  international rectifier
irf5210lpbf irf5210spbf.pdf pdf_icon

IRF5210PBF

PD - 97049BIRF5210SPbFIRF5210LPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 60ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF5210S/LID = -38ASl P-Channell Lead-FreeDDDescriptionFeatures of this design are a 150C

 7.2. Size:125K  international rectifier
irf5210.pdf pdf_icon

IRF5210PBF

PD - 91434AIRF5210HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = -100V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.06 Fast SwitchingG P-ChannelID = -40A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-

 7.3. Size:186K  international rectifier
irf5210s.pdf pdf_icon

IRF5210PBF

PD - 91405CIRF5210S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF5210S)VDSS = -100V Low-profile through-hole (IRF5210L) 175C Operating TemperatureRDS(on) = 0.06 Fast SwitchingG P-ChannelID = -40A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve

Datasheet: IRF4905PBF , IRF4905SPBF , IRF520NL , IRF520NLPBF , IRF520NPBF , IRF520S , IRF520SPBF , IRF5210LPBF , IRFP450 , IRF5210SPBF , IRF5305LPBF , IRF5305PBF , IRF5305SPBF , IRF530NPBF , IRF530NSPBF , IRF530S , IRF540NLPBF .

History: QM3004U1 | BSC076N06NS3G | ME25N06-G | AOD4100 | TPCA8082 | QM2605V | 2SK1443LS

Keywords - IRF5210PBF MOSFET datasheet

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