All MOSFET. IRF5210PBF Datasheet

 

IRF5210PBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF5210PBF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Maximum Power Dissipation (Pd): 200 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 40 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 180 nC
   Rise Time (tr): 86 nS
   Drain-Source Capacitance (Cd): 790 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm
   Package: TO-220AB

 IRF5210PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF5210PBF Datasheet (PDF)

 ..1. Size:189K  international rectifier
irf5210pbf.pdf

IRF5210PBF
IRF5210PBF

PD - 95408IRF5210PbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = -100Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.06l P-ChannelGl Fully Avalanche RatedID = -40Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achi

 ..2. Size:189K  infineon
irf5210pbf.pdf

IRF5210PBF
IRF5210PBF

PD - 95408IRF5210PbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = -100Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.06l P-ChannelGl Fully Avalanche RatedID = -40Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achi

 7.1. Size:310K  international rectifier
irf5210lpbf irf5210spbf.pdf

IRF5210PBF
IRF5210PBF

PD - 97049BIRF5210SPbFIRF5210LPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 60ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF5210S/LID = -38ASl P-Channell Lead-FreeDDDescriptionFeatures of this design are a 150C

 7.2. Size:125K  international rectifier
irf5210.pdf

IRF5210PBF
IRF5210PBF

PD - 91434AIRF5210HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = -100V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.06 Fast SwitchingG P-ChannelID = -40A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-

 7.3. Size:186K  international rectifier
irf5210s.pdf

IRF5210PBF
IRF5210PBF

PD - 91405CIRF5210S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF5210S)VDSS = -100V Low-profile through-hole (IRF5210L) 175C Operating TemperatureRDS(on) = 0.06 Fast SwitchingG P-ChannelID = -40A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve

 7.4. Size:236K  international rectifier
auirf5210s.pdf

IRF5210PBF
IRF5210PBF

AUTOMOTIVE GRADEAUIRF5210SFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl P-Channel MOSFETDV(BR)DSS-100Vl Low On-Resistancel Dynamic dV/dT RatingRDS(on) max.60mGl 175C Operating TemperatureS ID-38Al Fast Switchingl Fully Avalanche Ratedl Repetitive Avalanche Allowed up toTjmaxDl Lead-Free, RoHS Compliantl Automotive Qualified *Desc

 7.5. Size:310K  infineon
irf5210spbf irf5210lpbf.pdf

IRF5210PBF
IRF5210PBF

PD - 97049BIRF5210SPbFIRF5210LPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 60ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF5210S/LID = -38ASl P-Channell Lead-FreeDDDescriptionFeatures of this design are a 150C

 7.6. Size:295K  infineon
auirf5210s.pdf

IRF5210PBF
IRF5210PBF

AUTOMOTIVE GRADE AUIRF5210S Features Advanced Process Technology VDSS -100V P-Channel MOSFET Ultra Low On-Resistance RDS(on) max. 60m Dynamic dv/dt Rating Fast Switching ID -38A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Automotive Qualified * S G Description Specifical

 7.7. Size:206K  inchange semiconductor
irf5210spbf.pdf

IRF5210PBF
IRF5210PBF

INCHANGE Semiconductorisc P-Channel MOSFET Transistor IRF5210SPBFFEATURESP-channelWith TO-263(D2PAK) packagingUninterruptible power supplyHigh speed switchingUltra low on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

 7.8. Size:279K  inchange semiconductor
irf5210.pdf

IRF5210PBF
IRF5210PBF

INCHANGE Semiconductorisc P-Channel MOSFET Transistor IRF5210,IIRF5210FEATURESStatic drain-source on-resistance:RDS(on)0.06Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extreme

Datasheet: IRF4905PBF , IRF4905SPBF , IRF520NL , IRF520NLPBF , IRF520NPBF , IRF520S , IRF520SPBF , IRF5210LPBF , IRFZ46N , IRF5210SPBF , IRF5305LPBF , IRF5305PBF , IRF5305SPBF , IRF530NPBF , IRF530NSPBF , IRF530S , IRF540NLPBF .

 

 
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