IRF5210PBF Spec and Replacement
Type Designator: IRF5210PBF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 86 nS
Cossⓘ - Output Capacitance: 790 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: TO-220AB
IRF5210PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF5210PBF Specs
irf5210pbf.pdf
PD - 95408 IRF5210PbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = -100V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.06 l P-Channel G l Fully Avalanche Rated ID = -40A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi... See More ⇒
irf5210lpbf irf5210spbf.pdf
PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = -100V l 150 C Operating Temperature l Fast Switching RDS(on) = 60m l Repetitive Avalanche Allowed up to Tjmax G l Some Parameters are Different from IRF5210S/L ID = -38A S l P-Channel l Lead-Free D D Description Features of this design are a 150 C... See More ⇒
irf5210.pdf
PD - 91434A IRF5210 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = -100V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.06 Fast Switching G P-Channel ID = -40A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-... See More ⇒
irf5210s.pdf
PD - 91405C IRF5210S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF5210S) VDSS = -100V Low-profile through-hole (IRF5210L) 175 C Operating Temperature RDS(on) = 0.06 Fast Switching G P-Channel ID = -40A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve... See More ⇒
Detailed specifications: IRF4905PBF , IRF4905SPBF , IRF520NL , IRF520NLPBF , IRF520NPBF , IRF520S , IRF520SPBF , IRF5210LPBF , NCEP15T14 , IRF5210SPBF , IRF5305LPBF , IRF5305PBF , IRF5305SPBF , IRF530NPBF , IRF530NSPBF , IRF530S , IRF540NLPBF .
History: QM04N65F
Keywords - IRF5210PBF MOSFET specs
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