IRF5M5210 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF5M5210

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 34 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 150 nS

Cossⓘ - Capacitancia de salida: 824 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm

Encapsulados: TO-254AA

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IRF5M5210 datasheet

 ..1. Size:112K  international rectifier
 irf5m5210.pdf pdf_icon

IRF5M5210

PD - 94247 HEXFET POWER MOSFET IRF5M5210 THRU-HOLE (TO-254AA) 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID -100V 0.07 -34A IRF5M5210 Fifth Generation HEXFET power MOSFETs from TO-254AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the

 9.1. Size:112K  international rectifier
 irf5m3710.pdf pdf_icon

IRF5M5210

PD - 94234 HEXFET POWER MOSFET IRF5M3710 THRU-HOLE (TO-254AA) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 100V 0.03 35A* IRF5M3710 Fifth Generation HEXFET power MOSFETs from TO-254AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the

 9.2. Size:111K  international rectifier
 irf5m3205.pdf pdf_icon

IRF5M5210

PD - 94292A HEXFET POWER MOSFET IRF5M3205 THRU-HOLE (TO-254AA) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 55V 0.015 35A* IRF5M3205 Fifth Generation HEXFET power MOSFETs from TO-254AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the

 9.3. Size:111K  international rectifier
 irf5m3415.pdf pdf_icon

IRF5M5210

PD - 94286A HEXFET POWER MOSFET IRF5M3415 THRU-HOLE (TO-254AA) 150V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 150V 0.049 35A IRF5M3415 Fifth Generation HEXFET power MOSFETs from TO-254AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the

MOSTRAR MÁS

Otros transistores... IRF5804, IRF5805PBF, IRF5806PBF, IRF5EA1310, IRF5M3205, IRF5M3415, IRF5M3710, IRF5M4905, IRFB31N20D, IRF5N3205, IRF5N3415, IRF5N3710, IRF5N4905, IRF5N5210, IRF5NJ3315, IRF5NJ5305, IRF5NJ540