IRF5M5210 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF5M5210
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 34 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 150 nS
Cossⓘ - Capacitancia de salida: 824 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
Paquete / Cubierta: TO-254AA
Búsqueda de reemplazo de IRF5M5210 MOSFET
IRF5M5210 Datasheet (PDF)
irf5m5210.pdf

PD - 94247HEXFET POWER MOSFET IRF5M5210THRU-HOLE (TO-254AA)100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID -100V 0.07 -34A IRF5M5210Fifth Generation HEXFET power MOSFETs fromTO-254AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the
irf5m3710.pdf

PD - 94234HEXFET POWER MOSFET IRF5M3710THRU-HOLE (TO-254AA)100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID 100V 0.03 35A* IRF5M3710Fifth Generation HEXFET power MOSFETs fromTO-254AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the
irf5m3205.pdf

PD - 94292AHEXFET POWER MOSFET IRF5M3205THRU-HOLE (TO-254AA)55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID 55V 0.015 35A* IRF5M3205Fifth Generation HEXFET power MOSFETs fromTO-254AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the
irf5m3415.pdf

PD - 94286AHEXFET POWER MOSFET IRF5M3415THRU-HOLE (TO-254AA)150V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID 150V 0.049 35A IRF5M3415Fifth Generation HEXFET power MOSFETs fromTO-254AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the
Otros transistores... IRF5804 , IRF5805PBF , IRF5806PBF , IRF5EA1310 , IRF5M3205 , IRF5M3415 , IRF5M3710 , IRF5M4905 , IRF730 , IRF5N3205 , IRF5N3415 , IRF5N3710 , IRF5N4905 , IRF5N5210 , IRF5NJ3315 , IRF5NJ5305 , IRF5NJ540 .
History: 2SK2708 | PSMN4R3-30PL | AOD4191L | SM7304ESKP | 2SK1700 | SML1310IG | WMO10N65EM
History: 2SK2708 | PSMN4R3-30PL | AOD4191L | SM7304ESKP | 2SK1700 | SML1310IG | WMO10N65EM



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