IRF5NJ5305 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF5NJ5305

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 22 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 125 nS

Cossⓘ - Capacitancia de salida: 495 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm

Encapsulados: SMD-0.5

 Búsqueda de reemplazo de IRF5NJ5305 MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRF5NJ5305 datasheet

 ..1. Size:117K  international rectifier
 irf5nj5305.pdf pdf_icon

IRF5NJ5305

PD - 94033 HEXFET POWER MOSFET IRF5NJ5305 SURFACE MOUNT (SMD-0.5) 55V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJ5305 -55V 0.065 -22A* Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with th

 7.1. Size:113K  international rectifier
 irf5nj540.pdf pdf_icon

IRF5NJ5305

PD - 94020A IRF5NJ540 HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJ540 100V 0.052 22A* Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features

 8.1. Size:171K  international rectifier
 irf5nj3315.pdf pdf_icon

IRF5NJ5305

PD-94287B HEXFET POWER MOSFET IRF5NJ3315 SURFACE MOUNT (SMD-0.5) 150V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJ3315 150V 0.08 20A Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the

 8.2. Size:114K  international rectifier
 irf5njz48.pdf pdf_icon

IRF5NJ5305

PD - 94034 IRF5NJZ48 HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJZ48 55V 0.016 22A* Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features fa

MOSTRAR MÁS

Otros transistores... IRF5M4905, IRF5M5210, IRF5N3205, IRF5N3415, IRF5N3710, IRF5N4905, IRF5N5210, IRF5NJ3315, IRLB3034, IRF5NJ540, IRF5NJ6215, IRF5NJ9540, IRF5NJZ34, IRF5NJZ48, IRF5Y1310CM, IRF5Y31N20, IRF5Y3315CM