IRF5NJ5305 Specs and Replacement
Type Designator: IRF5NJ5305
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 125 nS
Cossⓘ - Output Capacitance: 495 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: SMD-0.5
IRF5NJ5305 substitution
- MOSFET ⓘ Cross-Reference Search
IRF5NJ5305 datasheet
irf5nj5305.pdf
PD - 94033 HEXFET POWER MOSFET IRF5NJ5305 SURFACE MOUNT (SMD-0.5) 55V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJ5305 -55V 0.065 -22A* Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with th... See More ⇒
irf5nj540.pdf
PD - 94020A IRF5NJ540 HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJ540 100V 0.052 22A* Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features ... See More ⇒
irf5nj3315.pdf
PD-94287B HEXFET POWER MOSFET IRF5NJ3315 SURFACE MOUNT (SMD-0.5) 150V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJ3315 150V 0.08 20A Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the ... See More ⇒
irf5njz48.pdf
PD - 94034 IRF5NJZ48 HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJZ48 55V 0.016 22A* Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features fa... See More ⇒
Detailed specifications: IRF5M4905 , IRF5M5210 , IRF5N3205 , IRF5N3415 , IRF5N3710 , IRF5N4905 , IRF5N5210 , IRF5NJ3315 , IRLB3034 , IRF5NJ540 , IRF5NJ6215 , IRF5NJ9540 , IRF5NJZ34 , IRF5NJZ48 , IRF5Y1310CM , IRF5Y31N20 , IRF5Y3315CM .
Keywords - IRF5NJ5305 MOSFET specs
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