IRF5NJ540 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF5NJ540
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 75 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 22 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 104 nC
trⓘ - Tiempo de subida: 125 nS
Cossⓘ - Capacitancia de salida: 353 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
Paquete / Cubierta: SMD-0.5
Búsqueda de reemplazo de MOSFET IRF5NJ540
IRF5NJ540 Datasheet (PDF)
irf5nj540.pdf
PD - 94020AIRF5NJ540HEXFET POWER MOSFETSURFACE MOUNT (SMD-0.5) 100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF5NJ540 100V 0.052 22A*Fifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:
irf5nj5305.pdf
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irf5nj3315.pdf
PD-94287BHEXFET POWER MOSFET IRF5NJ3315SURFACE MOUNT (SMD-0.5)150V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5NJ3315 150V 0.08 20AFifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the
irf5njz48.pdf
PD - 94034IRF5NJZ48HEXFET POWER MOSFETSURFACE MOUNT (SMD-0.5) 55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF5NJZ48 55V 0.016 22A*Fifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:fa
irf5nj9540.pdf
PD - 94038AHEXFET POWER MOSFET IRF5NJ9540SURFACE MOUNT (SMD-0.5)100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5NJ9540 -100V 0.117 -18AFifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with
irf5njz34.pdf
PD - 94600IRF5NJZ34HEXFET POWER MOSFETSURFACE MOUNT (SMD-0.5) 55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF5NJZ34 55V 0.04 22A*Fifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features:fast
irf5nj6215.pdf
PD - 94284AHEXFET POWER MOSFET IRF5NJ6215SURFACE MOUNT (SMD-0.5)150V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5NJ6215 -150V 0.29 -11AFifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with t
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