IRF5NJ540 Todos los transistores

 

IRF5NJ540 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF5NJ540
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 22 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 104 nC
   trⓘ - Tiempo de subida: 125 nS
   Cossⓘ - Capacitancia de salida: 353 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
   Paquete / Cubierta: SMD-0.5
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IRF5NJ540 Datasheet (PDF)

 ..1. Size:113K  international rectifier
 irf5nj540.pdf pdf_icon

IRF5NJ540

PD - 94020AIRF5NJ540HEXFET POWER MOSFETSURFACE MOUNT (SMD-0.5) 100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF5NJ540 100V 0.052 22A*Fifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:

 7.1. Size:117K  international rectifier
 irf5nj5305.pdf pdf_icon

IRF5NJ540

PD - 94033HEXFET POWER MOSFET IRF5NJ5305SURFACE MOUNT (SMD-0.5)55V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5NJ5305 -55V 0.065 -22A*Fifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with th

 8.1. Size:171K  international rectifier
 irf5nj3315.pdf pdf_icon

IRF5NJ540

PD-94287BHEXFET POWER MOSFET IRF5NJ3315SURFACE MOUNT (SMD-0.5)150V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5NJ3315 150V 0.08 20AFifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the

 8.2. Size:114K  international rectifier
 irf5njz48.pdf pdf_icon

IRF5NJ540

PD - 94034IRF5NJZ48HEXFET POWER MOSFETSURFACE MOUNT (SMD-0.5) 55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF5NJZ48 55V 0.016 22A*Fifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:fa

MOSTRAR MÁS

Otros transistores... IRF5M5210 , IRF5N3205 , IRF5N3415 , IRF5N3710 , IRF5N4905 , IRF5N5210 , IRF5NJ3315 , IRF5NJ5305 , IRLZ44N , IRF5NJ6215 , IRF5NJ9540 , IRF5NJZ34 , IRF5NJZ48 , IRF5Y1310CM , IRF5Y31N20 , IRF5Y3315CM , IRF5Y3710CM .

History: PHD10N10E | SI5406CDC | IPD230N06LG | 2SK429 | HSU4103 | APT8014L2FLLG

 

 
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