IRF5Y31N20 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF5Y31N20

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 100 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 148 nS

Cossⓘ - Capacitancia de salida: 370 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.092 Ohm

Encapsulados: TO-257AA

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IRF5Y31N20 datasheet

 ..1. Size:97K  international rectifier
 irf5y31n20.pdf pdf_icon

IRF5Y31N20

PD - 94349A HEXFET POWER MOSFET IRF5Y31N20 THRU-HOLE (TO-257AA) 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y31N20 200V 0.092 18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the

 8.1. Size:103K  international rectifier
 irf5y3205cm.pdf pdf_icon

IRF5Y31N20

PD - 94179A HEXFET POWER MOSFET IRF5Y3205CM THRU-HOLE (TO-257AA) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 0.022 18A* IRF5Y3205CM 55V Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features

 8.2. Size:103K  international rectifier
 irf5y3710cm.pdf pdf_icon

IRF5Y31N20

PD - 94178 HEXFET POWER MOSFET IRF5Y3710CM THRU-HOLE (TO-257AA) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y3710CM 100V 0.035 18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features

 8.3. Size:104K  international rectifier
 irf5y3315cm.pdf pdf_icon

IRF5Y31N20

PD - 94268 HEXFET POWER MOSFET IRF5Y3315CM THRU-HOLE (TO-257AA) 150V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y3315CM 150V 0.085 18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features

MOSTRAR MÁS

Otros transistores... IRF5NJ3315, IRF5NJ5305, IRF5NJ540, IRF5NJ6215, IRF5NJ9540, IRF5NJZ34, IRF5NJZ48, IRF5Y1310CM, MMIS60R580P, IRF5Y3315CM, IRF5Y3710CM, IRF5Y5305CM, IRF5Y540CM, IRF5Y6215CM, IRF5Y9540CM, IRF5YZ48CM, IRF6100