IRF5Y6215CM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF5Y6215CM

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 65 nS

Cossⓘ - Capacitancia de salida: 230 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm

Encapsulados: TO-257AA

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IRF5Y6215CM datasheet

 ..1. Size:159K  international rectifier
 irf5y6215cm.pdf pdf_icon

IRF5Y6215CM

PD-94165A HEXFET POWER MOSFET IRF5Y6215CM THRU-HOLE (TO-257AA) 150V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y6215CM -150V 0.29 -11A Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features

 9.1. Size:103K  international rectifier
 irf5y3205cm.pdf pdf_icon

IRF5Y6215CM

PD - 94179A HEXFET POWER MOSFET IRF5Y3205CM THRU-HOLE (TO-257AA) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 0.022 18A* IRF5Y3205CM 55V Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features

 9.2. Size:105K  international rectifier
 irf5y1310cm.pdf pdf_icon

IRF5Y6215CM

PD - 94058 HEXFET POWER MOSFET IRF5Y1310CM THRU-HOLE (TO-257AA) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y1310CM 100V 0.044 18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features

 9.3. Size:106K  international rectifier
 irf5y5305cm.pdf pdf_icon

IRF5Y6215CM

PD - 94028 HEXFET POWER MOSFET IRF5Y5305CM THRU-HOLE (TO-257AA) 55V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y5305CM -55V 0.065 -18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features

MOSTRAR MÁS

Otros transistores... IRF5NJZ34, IRF5NJZ48, IRF5Y1310CM, IRF5Y31N20, IRF5Y3315CM, IRF5Y3710CM, IRF5Y5305CM, IRF5Y540CM, AO4468, IRF5Y9540CM, IRF5YZ48CM, IRF6100, IRF6100PBF, IRF610L, IRF610LPBF, IRF610PBF, IRF610SPBF