IRF5Y6215CM Specs and Replacement
Type Designator: IRF5Y6215CM
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 65 nS
Cossⓘ -
Output Capacitance: 230 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: TO-257AA
- MOSFET ⓘ Cross-Reference Search
IRF5Y6215CM datasheet
..1. Size:159K international rectifier
irf5y6215cm.pdf 
PD-94165A HEXFET POWER MOSFET IRF5Y6215CM THRU-HOLE (TO-257AA) 150V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y6215CM -150V 0.29 -11A Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features ... See More ⇒
9.1. Size:103K international rectifier
irf5y3205cm.pdf 
PD - 94179A HEXFET POWER MOSFET IRF5Y3205CM THRU-HOLE (TO-257AA) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 0.022 18A* IRF5Y3205CM 55V Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features... See More ⇒
9.2. Size:105K international rectifier
irf5y1310cm.pdf 
PD - 94058 HEXFET POWER MOSFET IRF5Y1310CM THRU-HOLE (TO-257AA) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y1310CM 100V 0.044 18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features ... See More ⇒
9.3. Size:106K international rectifier
irf5y5305cm.pdf 
PD - 94028 HEXFET POWER MOSFET IRF5Y5305CM THRU-HOLE (TO-257AA) 55V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y5305CM -55V 0.065 -18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features... See More ⇒
9.4. Size:97K international rectifier
irf5y31n20.pdf 
PD - 94349A HEXFET POWER MOSFET IRF5Y31N20 THRU-HOLE (TO-257AA) 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y31N20 200V 0.092 18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the... See More ⇒
9.5. Size:103K international rectifier
irf5y9540cm.pdf 
PD - 94027A HEXFET POWER MOSFET IRF5Y9540CM THRU-HOLE (TO-257AA) 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y9540CM -100V 0.117 -18A Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Featur... See More ⇒
9.6. Size:103K international rectifier
irf5y3710cm.pdf 
PD - 94178 HEXFET POWER MOSFET IRF5Y3710CM THRU-HOLE (TO-257AA) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y3710CM 100V 0.035 18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features ... See More ⇒
9.7. Size:104K international rectifier
irf5yz48cm.pdf 
PD - 94019A HEXFET POWER MOSFET IRF5YZ48CM THRU-HOLE (TO-257AA) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 0.029 18A* IRF5YZ48CM 55V Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features ... See More ⇒
9.8. Size:104K international rectifier
irf5y3315cm.pdf 
PD - 94268 HEXFET POWER MOSFET IRF5Y3315CM THRU-HOLE (TO-257AA) 150V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y3315CM 150V 0.085 18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features ... See More ⇒
9.9. Size:97K international rectifier
irf5y540cm.pdf 
PD - 94017B HEXFET POWER MOSFET IRF5Y540CM THRU-HOLE (TO-257AA) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y540CM 100V 0.058 18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features ... See More ⇒
Detailed specifications: IRF5NJZ34, IRF5NJZ48, IRF5Y1310CM, IRF5Y31N20, IRF5Y3315CM, IRF5Y3710CM, IRF5Y5305CM, IRF5Y540CM, AO4468, IRF5Y9540CM, IRF5YZ48CM, IRF6100, IRF6100PBF, IRF610L, IRF610LPBF, IRF610PBF, IRF610SPBF
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