IRF5YZ48CM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF5YZ48CM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 78 nS

Cossⓘ - Capacitancia de salida: 620 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm

Encapsulados: TO-257AA

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IRF5YZ48CM datasheet

 ..1. Size:104K  international rectifier
 irf5yz48cm.pdf pdf_icon

IRF5YZ48CM

PD - 94019A HEXFET POWER MOSFET IRF5YZ48CM THRU-HOLE (TO-257AA) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 0.029 18A* IRF5YZ48CM 55V Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features

 9.1. Size:103K  international rectifier
 irf5y3205cm.pdf pdf_icon

IRF5YZ48CM

PD - 94179A HEXFET POWER MOSFET IRF5Y3205CM THRU-HOLE (TO-257AA) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 0.022 18A* IRF5Y3205CM 55V Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features

 9.2. Size:159K  international rectifier
 irf5y6215cm.pdf pdf_icon

IRF5YZ48CM

PD-94165A HEXFET POWER MOSFET IRF5Y6215CM THRU-HOLE (TO-257AA) 150V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y6215CM -150V 0.29 -11A Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features

 9.3. Size:105K  international rectifier
 irf5y1310cm.pdf pdf_icon

IRF5YZ48CM

PD - 94058 HEXFET POWER MOSFET IRF5Y1310CM THRU-HOLE (TO-257AA) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y1310CM 100V 0.044 18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features

MOSTRAR MÁS

Otros transistores... IRF5Y1310CM, IRF5Y31N20, IRF5Y3315CM, IRF5Y3710CM, IRF5Y5305CM, IRF5Y540CM, IRF5Y6215CM, IRF5Y9540CM, IRFZ44N, IRF6100, IRF6100PBF, IRF610L, IRF610LPBF, IRF610PBF, IRF610SPBF, IRF614PBF, IRF614SPBF