IRF5YZ48CM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF5YZ48CM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 75 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 78 nS
Cossⓘ - Capacitancia de salida: 620 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm
Paquete / Cubierta: TO-257AA
Búsqueda de reemplazo de IRF5YZ48CM MOSFET
IRF5YZ48CM Datasheet (PDF)
irf5yz48cm.pdf

PD - 94019AHEXFET POWER MOSFET IRF5YZ48CMTHRU-HOLE (TO-257AA)55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID 0.029 18A* IRF5YZ48CM 55VFifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features:
irf5y3205cm.pdf

PD - 94179AHEXFET POWER MOSFET IRF5Y3205CMTHRU-HOLE (TO-257AA)55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID 0.022 18A* IRF5Y3205CM 55VFifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features
irf5y6215cm.pdf

PD-94165AHEXFET POWER MOSFET IRF5Y6215CMTHRU-HOLE (TO-257AA)150V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y6215CM -150V 0.29 -11AFifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:
irf5y1310cm.pdf

PD - 94058HEXFET POWER MOSFET IRF5Y1310CMTHRU-HOLE (TO-257AA)100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y1310CM 100V 0.044 18A*Fifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features:
Otros transistores... IRF5Y1310CM , IRF5Y31N20 , IRF5Y3315CM , IRF5Y3710CM , IRF5Y5305CM , IRF5Y540CM , IRF5Y6215CM , IRF5Y9540CM , IRFZ44N , IRF6100 , IRF6100PBF , IRF610L , IRF610LPBF , IRF610PBF , IRF610SPBF , IRF614PBF , IRF614SPBF .
History: PP9C15AT | IXFH66N20Q | WSP4068 | STL75N8LF6 | SI5457DC | HUFA76437S3ST | HGB035N10A
History: PP9C15AT | IXFH66N20Q | WSP4068 | STL75N8LF6 | SI5457DC | HUFA76437S3ST | HGB035N10A



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