FQP70N08 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQP70N08  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 155 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 300 nS

Cossⓘ - Capacitancia de salida: 790 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm

Encapsulados: TO-220

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FQP70N08 datasheet

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FQP70N08

August 2000 TM QFET QFET QFET QFET FQP70N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 70A, 80V, RDS(on) = 0.017 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 75 nC) planar stripe, DMOS technology. Low Crss ( typical 180 pF) This advanced technology has been e

 8.1. Size:636K  fairchild semi
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FQP70N08

August 2000 TM QFET QFET QFET QFET FQP70N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 57A, 100V, RDS(on) = 0.023 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 150 pF) This advanced technology has been

 8.2. Size:550K  onsemi
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FQP70N08

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... IRF620B, IRF620PBF, IRF620SPBF, IRF6215LPBF, IRF6215PBF, IRF6215SPBF, FQP6N90, FQP6P25, 8205A, FQP7N10, FQP7N10L, FQP7N20, FQP7N20L, FQP7N40, FQP7N60, FQP7N65C, FQP7N80