FQP70N08 Datasheet. Specs and Replacement

Type Designator: FQP70N08  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 155 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 300 nS

Cossⓘ - Output Capacitance: 790 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: TO-220

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FQP70N08 datasheet

 ..1. Size:665K  fairchild semi
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FQP70N08

August 2000 TM QFET QFET QFET QFET FQP70N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 70A, 80V, RDS(on) = 0.017 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 75 nC) planar stripe, DMOS technology. Low Crss ( typical 180 pF) This advanced technology has been e... See More ⇒

 8.1. Size:636K  fairchild semi
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FQP70N08

August 2000 TM QFET QFET QFET QFET FQP70N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 57A, 100V, RDS(on) = 0.023 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 150 pF) This advanced technology has been... See More ⇒

 8.2. Size:550K  onsemi
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FQP70N08

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: IRF620B, IRF620PBF, IRF620SPBF, IRF6215LPBF, IRF6215PBF, IRF6215SPBF, FQP6N90, FQP6P25, 8205A, FQP7N10, FQP7N10L, FQP7N20, FQP7N20L, FQP7N40, FQP7N60, FQP7N65C, FQP7N80

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