All MOSFET. FQP70N08 Datasheet

 

FQP70N08 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP70N08

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 155 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 70 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 75 nC

Rise Time (tr): 300 nS

Drain-Source Capacitance (Cd): 790 pF

Maximum Drain-Source On-State Resistance (Rds): 0.017 Ohm

Package: TO-220

FQP70N08 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP70N08 Datasheet (PDF)

1.1. fqp70n08.pdf Size:665K _fairchild_semi

FQP70N08
FQP70N08

August 2000 TM QFET QFET QFET QFET FQP70N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 70A, 80V, RDS(on) = 0.017Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 75 nC) planar stripe, DMOS technology. • Low Crss ( typical 180 pF) This advanced technology has been e

4.1. fqp70n10.pdf Size:636K _fairchild_semi

FQP70N08
FQP70N08

August 2000 TM QFET QFET QFET QFET FQP70N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 57A, 100V, RDS(on) = 0.023? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 150 pF) This advanced technology has been especially t

 

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