FQP7N80 Todos los transistores

 

FQP7N80 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQP7N80
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 167 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 40 nC
   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: TO-220
 

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FQP7N80 Datasheet (PDF)

 ..1. Size:798K  fairchild semi
 fqp7n80.pdf pdf_icon

FQP7N80

April 2000TMQFETQFETQFETQFET 800V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 19 pF)This advanced technology has been es

 0.1. Size:848K  fairchild semi
 fqp7n80c fqpf7n80c.pdf pdf_icon

FQP7N80

TMQFETFQP7N80C/FQPF7N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to

 0.2. Size:849K  onsemi
 fqp7n80c fqpf7n80c.pdf pdf_icon

FQP7N80

TMQFETFQP7N80C/FQPF7N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to

 9.1. Size:886K  fairchild semi
 fqp7n65c fqpf7n65c.pdf pdf_icon

FQP7N80

QFETFQP7N65C/FQPF7N65C650V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7A, 650V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to

MOSTRAR MÁS

Otros transistores... FQP70N08 , FQP7N10 , FQP7N10L , FQP7N20 , FQP7N20L , FQP7N40 , FQP7N60 , FQP7N65C , AON7408 , FQP7P20 , FQP90N10V2 , FQP9N08 , FQP9N08L , FQP9N15 , FQP9N25C , FQP9N50 , FQPF10N20 .

History: STP13N80K5 | NVTFS6H850N

 

 
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