All MOSFET. FQP7N80 Datasheet

 

FQP7N80 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP7N80

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 167 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 6.6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 40 nC

Rise Time (tr): 80 nS

Drain-Source Capacitance (Cd): 150 pF

Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Package: TO-220

FQP7N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP7N80 Datasheet (PDF)

1.1. fqp7n80.pdf Size:798K _fairchild_semi

FQP7N80
FQP7N80

April 2000 TM QFET QFET QFET QFET 800V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 6.6A, 800V, RDS(on) = 1.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 40 nC) planar stripe, DMOS technology. • Low Crss ( typical 19 pF) This advanced technology has been es

1.2. fqp7n80c fqpf7n80c.pdf Size:848K _fairchild_semi

FQP7N80
FQP7N80

TM QFET FQP7N80C/FQPF7N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.9? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to Fast swit

 5.1. fqp7n10l.pdf Size:544K _fairchild_semi

FQP7N80
FQP7N80

December 2000 TM QFET QFET QFET QFET FQP7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.3A, 100V, RDS(on) = 0.35Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. • Low Crss ( typical 12 pF) This advanced technology

5.2. fqp7n10.pdf Size:536K _fairchild_semi

FQP7N80
FQP7N80

December 2000 TM QFET QFET QFET QFET FQP7N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.3A, 100V, RDS(on) = 0.35Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 10 pF) This advanced technology is espe

 5.3. fqp7n40.pdf Size:752K _fairchild_semi

FQP7N80
FQP7N80

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 7A, 400V, RDS(on) = 0.8Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 13 pF) This advanced technology has been e

5.4. fqp7n65c fqpf7n65c.pdf Size:886K _fairchild_semi

FQP7N80
FQP7N80

QFET FQP7N65C/FQPF7N65C 650V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7A, 650V, RDS(on) = 1.4? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to Fast switchi

 5.5. fqp7n20l.pdf Size:557K _fairchild_semi

FQP7N80
FQP7N80

December 2000 TM QFET QFET QFET QFET FQP7N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 6.5A, 200V, RDS(on) = 0.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.5 pF) This advanced technology

5.6. fqp7n65c fqpf7n65cydtu fqpf7n65c f105.pdf Size:885K _fairchild_semi

FQP7N80
FQP7N80

® QFET FQP7N65C/FQPF7N65C 650V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC) planar stripe, DMOS technology. • Low Crss ( typical 12 pF) This advanced technology has been especially tailored to

5.7. fqp7n60.pdf Size:579K _fairchild_semi

FQP7N80
FQP7N80

April 2000 TM QFET QFET QFET QFET FQP7N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.4A, 600V, RDS(on) = 1.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 29 nC) planar stripe, DMOS technology. • Low Crss ( typical 16 pF) This advanced technology has been esp

5.8. fqp7n20.pdf Size:664K _fairchild_semi

FQP7N80
FQP7N80

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 6.6A, 200V, RDS(on) = 0.69Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 8.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.0 pF) This advanced technology has been

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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