All MOSFET. FQP7N80 Datasheet

 

FQP7N80 Datasheet and Replacement


   Type Designator: FQP7N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO-220
 

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FQP7N80 Datasheet (PDF)

 ..1. Size:798K  fairchild semi
 fqp7n80.pdf pdf_icon

FQP7N80

April 2000TMQFETQFETQFETQFET 800V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 19 pF)This advanced technology has been es

 0.1. Size:848K  fairchild semi
 fqp7n80c fqpf7n80c.pdf pdf_icon

FQP7N80

TMQFETFQP7N80C/FQPF7N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to

 0.2. Size:849K  onsemi
 fqp7n80c fqpf7n80c.pdf pdf_icon

FQP7N80

TMQFETFQP7N80C/FQPF7N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to

 9.1. Size:886K  fairchild semi
 fqp7n65c fqpf7n65c.pdf pdf_icon

FQP7N80

QFETFQP7N65C/FQPF7N65C650V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7A, 650V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to

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Datasheet: FQP70N08 , FQP7N10 , FQP7N10L , FQP7N20 , FQP7N20L , FQP7N40 , FQP7N60 , FQP7N65C , AON7408 , FQP7P20 , FQP90N10V2 , FQP9N08 , FQP9N08L , FQP9N15 , FQP9N25C , FQP9N50 , FQPF10N20 .

History: 2N7091 | KCF3650A | PSMN003-30P | GSM4599W | IXFA7N100P | FS10SM-10 | TK11A65W

Keywords - FQP7N80 MOSFET datasheet

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