FQPF11N40CT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQPF11N40CT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 44 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 28 nC
trⓘ - Tiempo de subida: 89 nS
Cossⓘ - Capacitancia de salida: 250 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.53 Ohm
Paquete / Cubierta: TO-220F
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FQPF11N40CT Datasheet (PDF)
fqpf11n40ct.pdf
May 2008 QFETFQP11N40C/FQPF11N40C 400V N-Channel MOSFETFeatures Description 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 28 nC)DMOS technology. Low Crss ( typical 85pF)This advanced technology has been especially
fqp11n40c fqpf11n40c.pdf
May 2008 QFETFQP11N40C/FQPF11N40C 400V N-Channel MOSFETFeatures Description 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 28 nC)DMOS technology. Low Crss ( typical 85pF)This advanced technology has been especially
fqpf11n40t.pdf
April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 6.6A, 400V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been
fqp11n50cf fqp11n50cf fqpf11n50cf.pdf
July 2005TMFRFETFQP11N50CF/FQPF11N50CF500V N-Channel MOSFETFeatures Description 11A, 500V, RDS(on) = 0.55 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge (typical 43 nC)DMOS technology. Low Crss (typical 20pF)This advanced technology has been especially tai
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: ATP208
History: ATP208
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918