FQPF11N40CT - параметры транзистора MOSFET, его аналоги, datasheet

FQPF11N40CT Datasheet (PDF)

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May 2008 QFETFQP11N40C/FQPF11N40C 400V N-Channel MOSFETFeatures Description 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 28 nC)DMOS technology. Low Crss ( typical 85pF)This advanced technology has been especially

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April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 6.6A, 400V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been

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July 2005TMFRFETFQP11N50CF/FQPF11N50CF500V N-Channel MOSFETFeatures Description 11A, 500V, RDS(on) = 0.55 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge (typical 43 nC)DMOS technology. Low Crss (typical 20pF)This advanced technology has been especially tai

Другие MOSFET... FQP9N08L , FQP9N15 , FQP9N25C , FQP9N50 , FQPF10N20 , FQPF10N60CF , FQPF10N60CT , FQPF10N60CYDTU , 8205A , FQPF11N40T , FQPF12N60 , FQPF12N60CT , FQPF12N60T , FQPF12P10 , FQPF12P20 , FQPF12P20XDTU , FQPF12P20YDTU .