FQPF11N40T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQPF11N40T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 6.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 100 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.48 Ohm

Encapsulados: TO-220F

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FQPF11N40T datasheet

 ..1. Size:709K  fairchild semi
 fqpf11n40t.pdf pdf_icon

FQPF11N40T

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.6A, 400V, RDS(on) = 0.48 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been

 5.1. Size:1213K  fairchild semi
 fqpf11n40ct.pdf pdf_icon

FQPF11N40T

May 2008 QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 28 nC) DMOS technology. Low Crss ( typical 85pF) This advanced technology has been especially

 5.2. Size:1216K  fairchild semi
 fqp11n40c fqpf11n40c.pdf pdf_icon

FQPF11N40T

May 2008 QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 28 nC) DMOS technology. Low Crss ( typical 85pF) This advanced technology has been especially

 7.1. Size:1291K  fairchild semi
 fqp11n50cf fqp11n50cf fqpf11n50cf.pdf pdf_icon

FQPF11N40T

July 2005 TM FRFET FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features Description 11A, 500V, RDS(on) = 0.55 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge (typical 43 nC) DMOS technology. Low Crss (typical 20pF) This advanced technology has been especially tai

MOSTRAR MÁS

Otros transistores... FQP9N15, FQP9N25C, FQP9N50, FQPF10N20, FQPF10N60CF, FQPF10N60CT, FQPF10N60CYDTU, FQPF11N40CT, 4435, FQPF12N60, FQPF12N60CT, FQPF12N60T, FQPF12P10, FQPF12P20, FQPF12P20XDTU, FQPF12P20YDTU, FQPF13N06