All MOSFET. FQPF11N40T Datasheet

 

FQPF11N40T Datasheet and Replacement


   Type Designator: FQPF11N40T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: TO-220F
 

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FQPF11N40T Datasheet (PDF)

 ..1. Size:709K  fairchild semi
 fqpf11n40t.pdf pdf_icon

FQPF11N40T

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 6.6A, 400V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been

 5.1. Size:1213K  fairchild semi
 fqpf11n40ct.pdf pdf_icon

FQPF11N40T

May 2008 QFETFQP11N40C/FQPF11N40C 400V N-Channel MOSFETFeatures Description 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 28 nC)DMOS technology. Low Crss ( typical 85pF)This advanced technology has been especially

 5.2. Size:1216K  fairchild semi
 fqp11n40c fqpf11n40c.pdf pdf_icon

FQPF11N40T

May 2008 QFETFQP11N40C/FQPF11N40C 400V N-Channel MOSFETFeatures Description 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 28 nC)DMOS technology. Low Crss ( typical 85pF)This advanced technology has been especially

 7.1. Size:1291K  fairchild semi
 fqp11n50cf fqp11n50cf fqpf11n50cf.pdf pdf_icon

FQPF11N40T

July 2005TMFRFETFQP11N50CF/FQPF11N50CF500V N-Channel MOSFETFeatures Description 11A, 500V, RDS(on) = 0.55 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge (typical 43 nC)DMOS technology. Low Crss (typical 20pF)This advanced technology has been especially tai

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Datasheet: FQP9N15 , FQP9N25C , FQP9N50 , FQPF10N20 , FQPF10N60CF , FQPF10N60CT , FQPF10N60CYDTU , FQPF11N40CT , 2SK3568 , FQPF12N60 , FQPF12N60CT , FQPF12N60T , FQPF12P10 , FQPF12P20 , FQPF12P20XDTU , FQPF12P20YDTU , FQPF13N06 .

History: SD210DE | HITK0204MP | FCB20N60F085 | STB9NK60ZD | VN1210N1 | SFG100N10GF | IRFHM8342

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