FQPF11N40T Specs and Replacement

Type Designator: FQPF11N40T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm

Package: TO-220F

FQPF11N40T substitution

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FQPF11N40T datasheet

 ..1. Size:709K  fairchild semi
 fqpf11n40t.pdf pdf_icon

FQPF11N40T

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.6A, 400V, RDS(on) = 0.48 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been... See More ⇒

 5.1. Size:1213K  fairchild semi
 fqpf11n40ct.pdf pdf_icon

FQPF11N40T

May 2008 QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 28 nC) DMOS technology. Low Crss ( typical 85pF) This advanced technology has been especially... See More ⇒

 5.2. Size:1216K  fairchild semi
 fqp11n40c fqpf11n40c.pdf pdf_icon

FQPF11N40T

May 2008 QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 28 nC) DMOS technology. Low Crss ( typical 85pF) This advanced technology has been especially... See More ⇒

 7.1. Size:1291K  fairchild semi
 fqp11n50cf fqp11n50cf fqpf11n50cf.pdf pdf_icon

FQPF11N40T

July 2005 TM FRFET FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features Description 11A, 500V, RDS(on) = 0.55 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge (typical 43 nC) DMOS technology. Low Crss (typical 20pF) This advanced technology has been especially tai... See More ⇒

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Detailed specifications: FQP9N15, FQP9N25C, FQP9N50, FQPF10N20, FQPF10N60CF, FQPF10N60CT, FQPF10N60CYDTU, FQPF11N40CT, 4435, FQPF12N60, FQPF12N60CT, FQPF12N60T, FQPF12P10, FQPF12P20, FQPF12P20XDTU, FQPF12P20YDTU, FQPF13N06

Keywords - FQPF11N40T MOSFET specs

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