IRFZ24 Todos los transistores

 

IRFZ24 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFZ24

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 60 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 17 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 25 nC

Resistencia drenaje-fuente RDS(on): 0.1 Ohm

Empaquetado / Estuche: TO220AB

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IRFZ24 Datasheet (PDF)

1.1. irfz24nspbf.pdf Size:672K _update

IRFZ24
IRFZ24

PD - 95147 IRFZ24NS/LPbF HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRFZ24NS) D VDSS = 55V Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature RDS(on) = 0.07Ω Fast Switching G Fully Avalanche Rated Lead-Free ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

1.2. irfz24npbf.pdf Size:242K _update

IRFZ24
IRFZ24

 IRFZ24NPbF ® l Advanced Process Technology D l Dynamic dv/dt Rating l 175°C Operating Temperature DSS l Fast Switching l Fully Avalanche Rated DS(on) Ω G l Lead-Free Description D S Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-res

 1.3. irfz24pbf.pdf Size:1229K _update

IRFZ24
IRFZ24

IRFZ24, SiHFZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 • 175 °C Operating Temperature RDS(on) ()VGS = 10 V 0.10 • Fast Switching Qg (Max.) (nC) 25 • Ease of Paralleling Qgs (nC) 5.8 Qgd (nC) 11 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Third generatio

1.4. irfz24l irfz24s irfz24spbf.pdf Size:448K _update

IRFZ24
IRFZ24

IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 • Advanced Process Technology RDS(on) ()VGS = 10 V 0.10 • Surface Mount (IRFZ24S, SiHFZ24S) Qg (Max.) (nC) 25 • Low-ProfileThrough-Hole (IRFZ24L, SiHFZ24L) • 175 °C Operating Temperature Qgs (nC) 5.8 • Fast Sw

 1.5. irfz24n 1.pdf Size:53K _philips

IRFZ24
IRFZ24

Philips Semiconductors Product specification N-channel enhancement mode IRFZ24N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 17 A features very low on-state re

1.6. irfz24vs.pdf Size:123K _international_rectifier

IRFZ24
IRFZ24

PD - 94182 IRFZ24VS IRFZ24VL HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 60V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 60m? Fast Switching G Fully Avalanche Rated ID = 17A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to

1.7. irfz24ns.pdf Size:159K _international_rectifier

IRFZ24
IRFZ24

PD - 9.1355B IRFZ24NS/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL) 175C Operating Temperature RDS(on) = 0.07? Fast Switching G Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-res

1.8. irfz24n 1.pdf Size:53K _international_rectifier

IRFZ24
IRFZ24

Philips Semiconductors Product specification N-channel enhancement mode IRFZ24N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 17 A features very low on-state re

1.9. irfz24n.pdf Size:123K _international_rectifier

IRFZ24
IRFZ24

PD - 91354A IRFZ24N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 55V 175C Operating Temperature Fast Switching RDS(on) = 0.07? Fully Avalanche Rated G Description ID = 17A S Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area

1.10. irfz24v.pdf Size:200K _international_rectifier

IRFZ24
IRFZ24

PD - 94156 IRFZ24V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 60m? G Fast Switching Fully Avalanche Rated ID = 17A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex

1.11. irfz24s-l.pdf Size:193K _international_rectifier

IRFZ24
IRFZ24

PD - 9.891A IRFZ24S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ24S) Low-profile through-hole (IRFZ24L) 175C Operating Temperature RDS(on) = 0.10? Fast Switching G ID = 17A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Th

1.12. irfz24.pdf Size:166K _international_rectifier

IRFZ24
IRFZ24

1.13. irfz24s.pdf Size:359K _international_rectifier

IRFZ24
IRFZ24

PD - 9.891A IRFZ24S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ24S) Low-profile through-hole (IRFZ24L) 175C Operating Temperature RDS(on) = 0.10? Fast Switching G ID = 17A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Th

1.14. irfz24a.pdf Size:494K _samsung

IRFZ24
IRFZ24

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.07 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 60V ? Lower RDS(ON) : 0.050 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol

Otros transistores... IRFY9240C , IRFZ10 , IRFZ12 , IRFZ14 , IRFZ14A , IRFZ15 , IRFZ20 , IRFZ22 , 2SK2611 , IRFZ24A , IRFZ24N , IRFZ24NL , IRFZ24NS , IRFZ25 , IRFZ30 , IRFZ32 , IRFZ34 .

 
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