IRFZ24 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFZ24
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 60 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 17 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 25(max) nC
Rise Time (tr): 58 nS
Drain-Source Capacitance (Cd): 360 pF
Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm
Package: TO220
IRFZ24 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFZ24 Datasheet (PDF)
irfz24pbf sihfz24.pdf
IRFZ24, SiHFZ24Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.10 Fast SwitchingQg (Max.) (nC) 25 Ease of ParallelingQgs (nC) 5.8Qgd (nC) 11 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDESCRIPTIONThird generatio
irfz24 sihfz24.pdf
IRFZ24, SiHFZ24www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt ratingVDS (V) 60 175 C operating temperatureRDS(on) ()VGS = 10 V 0.10 Fast switchingQg max. (nC) 25 Ease of parallelingQgs (nC) 5.8Qgd (nC) 11 Simple drive requirementsConfiguration Single Material categorization: for definitions of compliance
irfz24v.pdf
PD - 94156IRFZ24VHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 60mG Fast Switching Fully Avalanche RatedID = 17A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to ach
irfz24npbf.pdf
IRFZ24NPbF l Advanced Process TechnologyDl Dynamic dv/dt Ratingl 175C Operating Temperature DSS l Fast Switchingl Fully Avalanche Rated DS(on) Gl Lead-FreeDescription D SFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-res
irfz24n.pdf
PD - 91354AIRFZ24NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.07 Fully Avalanche RatedGDescriptionID = 17ASFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper sili
irfz24vs.pdf
PD - 94182IRFZ24VSIRFZ24VLHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 60V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 60m Fast SwitchingG Fully Avalanche RatedID = 17A Optimized for SMPS ApplicationsSDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techn
irfz24nlpbf.pdf
PD - 95147IRFZ24NS/LPbFHEXFET Power MOSFET Advanced Process Technology Surface Mount (IRFZ24NS)DVDSS = 55V Low-profile through-hole (IRFZ24NL) 175C Operating TemperatureRDS(on) = 0.07 Fast SwitchingG Fully Avalanche Rated Lead-Free ID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve
irfz24s.pdf
PD - 9.891AIRFZ24S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRFZ24S) Low-profile through-hole (IRFZ24L) 175C Operating Temperature RDS(on) = 0.10 Fast SwitchingGID = 17ASDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a
irfz24nspbf.pdf
PD - 95147IRFZ24NS/LPbFHEXFET Power MOSFET Advanced Process Technology Surface Mount (IRFZ24NS)DVDSS = 55V Low-profile through-hole (IRFZ24NL) 175C Operating TemperatureRDS(on) = 0.07 Fast SwitchingG Fully Avalanche Rated Lead-Free ID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve
irfz24s irfz24l.pdf
PD - 9.891AIRFZ24S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRFZ24S) Low-profile through-hole (IRFZ24L) 175C Operating Temperature RDS(on) = 0.10 Fast SwitchingGID = 17ASDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a
irfz24n 1.pdf
Philips Semiconductors Product specification N-channel enhancement mode IRFZ24N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 17 Afeatures very low on-s
irfz24ns.pdf
PD - 9.1355BIRFZ24NS/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL) 175C Operating Temperature RDS(on) = 0.07 Fast SwitchingG Fully Avalanche RatedID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low
irfz24n 1.pdf
Philips Semiconductors Product specification N-channel enhancement mode IRFZ24N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 17 Afeatures very low on-s
irfz24a.pdf
Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input CapacitanceID = 17 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratings
irfz24l irfz24s irfz24spbf sihfz24s.pdf
IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.10 Surface Mount (IRFZ24S, SiHFZ24S)Qg (Max.) (nC) 25 Low-ProfileThrough-Hole (IRFZ24L, SiHFZ24L) 175 C Operating TemperatureQgs (nC) 5.8 Fast Sw
irfz24npbf.pdf
IRFZ24NPbF l Advanced Process TechnologyDl Dynamic dv/dt Ratingl 175C Operating Temperature DSS l Fast Switchingl Fully Avalanche Rated DS(on) Gl Lead-FreeDescription D SFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-res
auirfz24ns auirfz24nl.pdf
AUIRFZ24NS AUTOMOTIVE GRADE AUIRFZ24NL HEXFET Power MOSFET Features Advanced Planar Technology VDSS 55V Low On-Resistance Dynamic dV/dT and dI/dT capability 175C Operating Temperature RDS(on) max. 0.07 Fast Switching Fully Avalanche Rated ID 17A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D
irfz24ns.pdf
IRFZ24NSwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.023 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.027 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire
irfz24nlpbf.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ24NLPbFFEATURESWith TO-262(DPAK) packagingSurface mountHigh speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
irfz24nspbf.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ24NSPbFFEATURESWith TO-263(D2PAK) packagingSurface mountHigh speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
Datasheet: IRFY9240C , IRFZ10 , IRFZ12 , IRFZ14 , IRFZ14A , IRFZ15 , IRFZ20 , IRFZ22 , IRF5305 , IRFZ24A , IRFZ24N , IRFZ24NL , IRFZ24NS , IRFZ25 , IRFZ30 , IRFZ32 , IRFZ34 .
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