All MOSFET. IRFZ24 Datasheet

 

IRFZ24 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFZ24

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 17 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 25(max) nC

Rise Time (tr): 58 nS

Drain-Source Capacitance (Cd): 360 pF

Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm

Package: TO220

IRFZ24 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFZ24 Datasheet (PDF)

 ..1. Size:166K  international rectifier
irfz24.pdf

IRFZ24 IRFZ24

 ..2. Size:1229K  vishay
irfz24pbf sihfz24.pdf

IRFZ24 IRFZ24

IRFZ24, SiHFZ24Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.10 Fast SwitchingQg (Max.) (nC) 25 Ease of ParallelingQgs (nC) 5.8Qgd (nC) 11 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDESCRIPTIONThird generatio

 ..3. Size:348K  vishay
irfz24 sihfz24.pdf

IRFZ24 IRFZ24

IRFZ24, SiHFZ24www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt ratingVDS (V) 60 175 C operating temperatureRDS(on) ()VGS = 10 V 0.10 Fast switchingQg max. (nC) 25 Ease of parallelingQgs (nC) 5.8Qgd (nC) 11 Simple drive requirementsConfiguration Single Material categorization: for definitions of compliance

 0.1. Size:200K  international rectifier
irfz24v.pdf

IRFZ24 IRFZ24

PD - 94156IRFZ24VHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 60mG Fast Switching Fully Avalanche RatedID = 17A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to ach

 0.2. Size:242K  international rectifier
irfz24npbf.pdf

IRFZ24 IRFZ24

IRFZ24NPbF l Advanced Process TechnologyDl Dynamic dv/dt Ratingl 175C Operating Temperature DSS l Fast Switchingl Fully Avalanche Rated DS(on) Gl Lead-FreeDescription D SFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-res

 0.3. Size:123K  international rectifier
irfz24n.pdf

IRFZ24 IRFZ24

PD - 91354AIRFZ24NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.07 Fully Avalanche RatedGDescriptionID = 17ASFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper sili

 0.4. Size:123K  international rectifier
irfz24vs.pdf

IRFZ24 IRFZ24

PD - 94182IRFZ24VSIRFZ24VLHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 60V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 60m Fast SwitchingG Fully Avalanche RatedID = 17A Optimized for SMPS ApplicationsSDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techn

 0.5. Size:675K  international rectifier
irfz24nlpbf.pdf

IRFZ24 IRFZ24

PD - 95147IRFZ24NS/LPbFHEXFET Power MOSFET Advanced Process Technology Surface Mount (IRFZ24NS)DVDSS = 55V Low-profile through-hole (IRFZ24NL) 175C Operating TemperatureRDS(on) = 0.07 Fast SwitchingG Fully Avalanche Rated Lead-Free ID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve

 0.6. Size:359K  international rectifier
irfz24s.pdf

IRFZ24 IRFZ24

PD - 9.891AIRFZ24S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRFZ24S) Low-profile through-hole (IRFZ24L) 175C Operating Temperature RDS(on) = 0.10 Fast SwitchingGID = 17ASDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a

 0.7. Size:672K  international rectifier
irfz24nspbf.pdf

IRFZ24 IRFZ24

PD - 95147IRFZ24NS/LPbFHEXFET Power MOSFET Advanced Process Technology Surface Mount (IRFZ24NS)DVDSS = 55V Low-profile through-hole (IRFZ24NL) 175C Operating TemperatureRDS(on) = 0.07 Fast SwitchingG Fully Avalanche Rated Lead-Free ID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve

 0.8. Size:193K  international rectifier
irfz24s irfz24l.pdf

IRFZ24 IRFZ24

PD - 9.891AIRFZ24S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRFZ24S) Low-profile through-hole (IRFZ24L) 175C Operating Temperature RDS(on) = 0.10 Fast SwitchingGID = 17ASDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a

 0.9. Size:53K  international rectifier
irfz24n 1.pdf

IRFZ24 IRFZ24

Philips Semiconductors Product specification N-channel enhancement mode IRFZ24N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 17 Afeatures very low on-s

 0.10. Size:159K  international rectifier
irfz24ns.pdf

IRFZ24 IRFZ24

PD - 9.1355BIRFZ24NS/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL) 175C Operating Temperature RDS(on) = 0.07 Fast SwitchingG Fully Avalanche RatedID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low

 0.11. Size:53K  philips
irfz24n 1.pdf

IRFZ24 IRFZ24

Philips Semiconductors Product specification N-channel enhancement mode IRFZ24N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 17 Afeatures very low on-s

 0.12. Size:494K  samsung
irfz24a.pdf

IRFZ24 IRFZ24

Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input CapacitanceID = 17 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratings

 0.13. Size:448K  vishay
irfz24l irfz24s irfz24spbf sihfz24s.pdf

IRFZ24 IRFZ24

IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.10 Surface Mount (IRFZ24S, SiHFZ24S)Qg (Max.) (nC) 25 Low-ProfileThrough-Hole (IRFZ24L, SiHFZ24L) 175 C Operating TemperatureQgs (nC) 5.8 Fast Sw

 0.14. Size:242K  infineon
irfz24npbf.pdf

IRFZ24 IRFZ24

IRFZ24NPbF l Advanced Process TechnologyDl Dynamic dv/dt Ratingl 175C Operating Temperature DSS l Fast Switchingl Fully Avalanche Rated DS(on) Gl Lead-FreeDescription D SFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-res

 0.15. Size:641K  infineon
auirfz24ns auirfz24nl.pdf

IRFZ24 IRFZ24

AUIRFZ24NS AUTOMOTIVE GRADE AUIRFZ24NL HEXFET Power MOSFET Features Advanced Planar Technology VDSS 55V Low On-Resistance Dynamic dV/dT and dI/dT capability 175C Operating Temperature RDS(on) max. 0.07 Fast Switching Fully Avalanche Rated ID 17A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D

 0.16. Size:2064K  cn vbsemi
irfz24ns.pdf

IRFZ24 IRFZ24

IRFZ24NSwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.023 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.027 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire

 0.17. Size:214K  inchange semiconductor
irfz24nlpbf.pdf

IRFZ24 IRFZ24

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ24NLPbFFEATURESWith TO-262(DPAK) packagingSurface mountHigh speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 0.18. Size:203K  inchange semiconductor
irfz24nspbf.pdf

IRFZ24 IRFZ24

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ24NSPbFFEATURESWith TO-263(D2PAK) packagingSurface mountHigh speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

Datasheet: IRFY9240C , IRFZ10 , IRFZ12 , IRFZ14 , IRFZ14A , IRFZ15 , IRFZ20 , IRFZ22 , IRF5305 , IRFZ24A , IRFZ24N , IRFZ24NL , IRFZ24NS , IRFZ25 , IRFZ30 , IRFZ32 , IRFZ34 .

 

 
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